Optical anisotropy and polarization selectivity in MoS2/Ta2NiSe5 van der Waals heterostructures

Abstract

In-plane anisotropy induced by a low-symmetric lattice structure in two-dimensional (2D) van der Waals (vdWs) materials has significantly promoted their applications in optoelectronic devices, especially in polarization photodetection. Given the mature preparation technology of transition metal dichalcogenides (TMDCs), introducing artificial anisotropy into symmetric TMDCs becomes a promising way to trigger more excellent functionalities beyond their intrinsic properties. Herein, monolayer MoS2 in the MoS2/Ta2NiSe5 vdWs heterostructure presents obvious anisotropic optical properties confirmed by polarized Raman and photoluminescence spectra, which is mainly ascribed to the uniaxial strain via strong interlayer couplings. Moreover, the MoS2/Ta2NiSe5 heterojunction endows unique orientation-selected polarized absorbance. In the visible region, the dominant polarized orientation is along the armchair axis while rotated to the perpendicular direction in the near-infrared spectrum, which is mainly ascribed to the intrinsic linear dichroism of Ta2NiSe5. The results suggest that the MoS2/Ta2NiSe5 heterostructure provides a promising platform for artificial regulation of the optoelectronic properties of symmetric MoS2 and integrated optical applications in the polarization-sensitive photodetection.

Photodetectors Based on ZrS3/MoS2 Heterostructures

“…That is to say, the electrons in MoS 2 tend to move into ZrS 3 and holes in an opposite direction from ZrS 3 to MoS 2 . The separation of electron–hole pairs reduces the recombination possibility, and in turn, the PL intensity of MoS 2 in the heterostructure is significantly diminished, as shown in Figure c, similar to the reported phenomenon in MoS 2 /Ta 2 NiSe 5 …”

“…The separation of electron−hole pairs reduces the recombination possibility, and in turn, the PL intensity of MoS 2 in the heterostructure is significantly diminished, as shown in Figure 2c, similar to the reported phenomenon in MoS 2 /Ta 2 NiSe 5 . 45 Figure 3a−c illustrates the photoresponse properties of the ZrS 3 /MoS 2 photodetector under 310, 405, and 638 nm light illumination ranging from the ultraviolet to the visible spectrum, respectively. Intuitively, the current on/off ratio is almost 10 3 under the dark and the drain-source current (I ds ) rises distinctly by varying the light intensity, implying the superior optoelectronic properties of this heterostructure.…”

Linear dichroism transition and polarization-sensitive photodetector of quasi-one-dimensional palladium bromide

“…[4,[11][12][13] For instance, by combining different types of low-dimensional materials, the spectral response range of opto-devices can be significantly broadened. [14][15][16][17][18] And low-dimensional materials can affect their physical properties through surface defect states or local fields, [19][20][21] which provide opportunities to optimize polarized light detectors. Nanowire-based polarized photodetectors have gained significant recognition for their compact device size, exceptional conversion efficiency, adjustable light absorption coefficient, and wide spectral range.…”