Optical anisotropy and diamagnetic energy shifts in InP–GaP lateral quantum wells

Shin, Yong Ho; Kim, Yongmin; Song, Jin Dong; Lee, Y.T.; Saito, Hiroaki; Nakamura, Daisuke; Matsuda, Yasuhiro H.; Takeyama, S.

doi:10.1016/j.jlumin.2014.02.036

Journal of Luminescence

2014

DOI: 10.1016/j.jlumin.2014.02.036

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Optical anisotropy and diamagnetic energy shifts in InP–GaP lateral quantum wells

Yong Ho Shin

Yongmin Kim

Jin Dong Song

et al.

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Cited by 6 publications

(1 citation statement)

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“…This indicates the composition modulation that was present in the samples, in agreement with previous reports. 17,18) Furthermore, the PL peak energy of the three LCM samples was lower than that of bulk GaInP, which is ∼2 eV. The low PL peak energy confirms the formation of LCM GaInP.…”

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Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures

Park

Kang

Ravindran

et al. 2017

Appl. Phys. Express

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We report changes at the interface between Ga-rich/In-rich GaInP vertical slabs in laterally composition modulated (LCM) GaInP as a function of the V/III ratio. The photoluminescence exhibits satellite peaks, indicating that the parasitic potential between the GaInP vertical slabs disappears as the V/III ratio decreases. However, a high V/III ratio leads to an abrupt interface, increasing the parasitic potential because of the phosphorus-amount-dependent diffusion of group-III atoms during growth. These results suggest that the V/III ratio is an important parameter that must be wisely chosen in designing optoelectronic devices incorporating LCM structure.

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mentioning

confidence: 85%

Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures

Park

Kang

Ravindran

et al. 2017

Appl. Phys. Express

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Optically detected kinetic carrier transfer in InP-GaP lateral nanowires

Shin

Kim

Song

2018

Journal of Luminescence

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Enhancement of minority carrier lifetime of GaInP with lateral composition modulation structure grown by molecular beam epitaxy

Park

Ravindran

et al. 2014

Journal of Applied Physics

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We report the enhancement of the minority carrier lifetime of GaInP with a lateral composition modulated (LCM) structure grown using molecular beam epitaxy (MBE). The structural and optical properties of the grown samples are studied by transmission electron microscopy and photoluminescence, which reveal the formation of vertically aligned bright and dark slabs corresponding to Ga-rich and In-rich GaInP regions, respectively, with good crystal quality. With the decrease of V/III ratio during LCM GaInP growth, it is seen that the band gap of LCM GaInP is reduced, while the PL intensity remains high and is comparable to that of bulk GaInP. We also investigate the minority carrier lifetime of LCM structures made with different flux ratios. It is found that the minority carrier lifetime of LCM GaInP is ∼37 times larger than that of bulk GaInP material, due to the spatial separation of electrons and holes by In-rich and Ga-rich regions of the LCM GaInP, respectively. We further demonstrate that the minority carrier lifetime of the grown LCM GaInP structures can easily be tuned by simply adjusting the V/III flux ratio during MBE growth, providing a simple yet powerful technique to tailor the electrical and optical properties at will. The exceptionally high carrier lifetime and the reduced band gap of LCM GaInP make them a highly attractive candidate for forming the top cell of multi-junction solar cells and can enhance their efficiency, and also make them suitable for other optoelectronics devices, such as photodetectors, where longer carrier lifetime is beneficial.

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Optical anisotropy and diamagnetic energy shifts in InP–GaP lateral quantum wells

Cited by 6 publications

References 13 publications

Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures

Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures

Optically detected kinetic carrier transfer in InP-GaP lateral nanowires

Enhancement of minority carrier lifetime of GaInP with lateral composition modulation structure grown by molecular beam epitaxy

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