2020
DOI: 10.3390/cryst10040327
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Optical and Thermoelectric Properties of Surface-Oxidation Sensitive Layered Zirconium Dichalcogenides ZrS2−xSex (x = 0, 1, 2) Crystals Grown by Chemical Vapor Transport

Abstract: In this work, structure, optical, and thermoelectric properties of layered ZrS2−xSex single crystals with selenium composition of x = 0, 1, and 2 were examined. Single crystals of zirconium dichalcogenides layer compounds were grown by chemical vapor transport method using I2 as the transport agent. X-ray diffraction (XRD) and high-resolution transmission electron microscope (HRTEM) results indicated that ZrS2−xSex (x = 0, 1, and 2) were crystalized in hexagonal CdI2 structure with one-layer trigonal (1T) stac… Show more

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Cited by 24 publications
(17 citation statements)
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“…The electrical resistivity (ρ) increases with temperature, consistent with the temperature dependence characteristics of semimetals. The room-temperature electrical resistivity of ZrTiSe 4 is four orders of magnitude smaller than TiSe 2 while slightly larger than ZrSe 2 . The sample shows a negative Seebeck coefficient, in agreement with the Hall measurement results.…”
Section: Resultssupporting
confidence: 86%
See 1 more Smart Citation
“…The electrical resistivity (ρ) increases with temperature, consistent with the temperature dependence characteristics of semimetals. The room-temperature electrical resistivity of ZrTiSe 4 is four orders of magnitude smaller than TiSe 2 while slightly larger than ZrSe 2 . The sample shows a negative Seebeck coefficient, in agreement with the Hall measurement results.…”
Section: Resultssupporting
confidence: 86%
“…The sample shows a negative Seebeck coefficient, in agreement with the Hall measurement results. The magnitude of the Seebeck coefficient increases with temperature, reaching a value of 202 ± 11 μV K –1 at 300 K, which is much larger than the parent compounds. , The Seebeck coefficient and other room-temperature physical properties of ZrTiSe 4 are listed in Table . No obvious bipolar effect was detected in ZrTiSe 4 from the electrical resistivity and the Seebeck coefficient in the temperature range of 2–400 K. The calculated PF (Figure c) shows a maximum value of 0.45 ± 0.05 mW m –1 K –2 at ∼275 K. The room-temperature PF of ZrTiSe 4 is significantly larger than 0.05 mW m –1 K –2 for ZrSe 2 and 3.48 × 10 –4 mW m –1 K –2 for TiSe 2 …”
Section: Resultsmentioning
confidence: 99%
“…The XRD patterns of the samples (Figure 1A) match one of the 1T-ZrSe 2 (ICSD card: 652247), whose CdI 2 layered structure preferentially orients their (001) plane parallel to the substrate. [80][81][82][83] After exfoliation, and in particular after MW treatment, an additional peak emerges at 23.5 • , which may correspond to monoclinic ZrO 2 (space group: P2 1 /c). No XRD peaks attributable to the presence of Ni were observed, indicating the absence of detectable crystalline domains of Ni-based compounds.…”
Section: Materials Synthesis Exfoliation and Characterizationmentioning
confidence: 99%
“…The AFM analysis (Figure 1E and F) indicates that the flakes have a nanometric thickness, fitted by a log-normal distribution peaked at 5.3 nm. Being the c lattice constant of the ZrSe 2 crystal equal to 6.1282 Å, [80][81][82][83] the thickness data indicate the prevalence of few (≤10)layer flakes in the sample. After MW irradiation (MW-ex-ZrSe 2 sample), the exfoliated flakes evolve towards milled irregular nanostructures, some of them resembling zerodimensional quantum dots (Figure 1 G and H).…”
Section: Materials Synthesis Exfoliation and Characterizationmentioning
confidence: 99%
“…In this work we study the finite-temperature anharmonic phonons and the associated thermodynamic properties along with the LTC of the two-dimensional (2D) zirconium disulphide (ZrS2) monolayer (ML), which is a typical 2D transition metal dichalcogenide (TMDC) that has been successfully synthesized [32][33][34][35]. Lowering the dimensionality and nano-structuring are reported to play major roles in suppressing the LTC that leads to an enhancement in the figure of merit (ZT) [36][37][38][39][40].…”
Section: Introductionmentioning
confidence: 99%