Optical and Thermoelectric properties of Gd doped Wurtzite GaN

Amiri, B.; Lazreg, A.; Bensaber, F. Amar.

doi:10.1016/j.ijleo.2021.166798

Cited by 16 publications

(7 citation statements)

References 36 publications

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“…For pure GaN the static dielectric constant is 4.1 which increases with increased energy reaching a maximum value of 7.11 at 6.48 eV then dropping gradually. The static dielectric constant in our study is slightly lower than the experimental reported value of 5.35 [56,61]. The reason behind it can be described by Penn's model [62] (…”

Section: Optical Propertiescontrasting

confidence: 78%

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Improving optical properties of wurtzite GaN with C and Fe co-doping: A DFT+U study

et al. 2022

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Density Functional Theory with Hubbard U parameter (DFT+U) was used to study the impact of C (6.25%) and Fe (12.5%) mono- and co-doping on wurtzite GaN, which modified the structural, electrical, magnetic, and optical properties. Under conditions of abundant N, the doping effect led to an increase in thermodynamic formability. For all the dopant combinations, a reduction in the band gap was seen. GaN becomes a ferrimagnetic material because of co-doping. The performance of the C and Fe co-doped GaN was the best due to the redshift of the absorption edge, which resulted in the improved absorption of near ultraviolet (UV) and visible-infrared (VIS-IR) photonic energies for both monodoping and co-doping structures. The doping caused an increase in the refractive index and dielectric constant. For C and Fe co-doped GaN, the maximum static dielectric constant and refractive index were 19.58 and 4.45, respectively. The findings of this work therefore point to the possible use of C, Fe mono- and co-doped GaN in UV, IR optoelectronic and photonic devices.

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Section: Optical Propertiescontrasting

confidence: 78%

“…So, it becomes important to evaluate and tune the dielectric response by the addition of impurity and regulate the optical properties accordingly. The imaginary part of the dielectric function is calculated from the following expression [56],…”

Section: Optical Propertiesmentioning

confidence: 99%

Improving optical properties of wurtzite GaN with C and Fe co-doping: A DFT+U study

et al. 2022

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“…One common material used for the fabrication of optoelectronic device is Silicon (Rao et al 2010 ). After silicon, III–V semiconductor materials such as Indium Galium Arsenide (InGaAs) (Iqbal et al 2020 ), Gallium Nitride (GaN) (Ziane et al 2015 ) and Indium Phosphide (InP) (Zheng et al 2022 ) have been the fastest-growing, most widely-used and highest-output semiconductor materials for optoelectronic use (Zhou 2021 ; Amiri and Lazreg 2021 ). Compound semiconductor materials outperform conventional semiconductor materials in terms of (1) High electron mobility (2) Wide bandwidth (3) High frequency (4) High power (5) High linearity (6) Diversity of material selection (7) Anti radiation.…”

Section: Design and Theoretical Backgroundmentioning

confidence: 99%

InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research

Ravindran

Nirmal

et al. 2022

Opt Quant Electron

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During the outbreak of the COVID-19 illness, mRNA (messenger RNA) injections proved to be effective vaccination. Among the presently available analytical techniques, UV/VIS spectrophotometry is a trustworthy and practical instrument that may provide information on the chemical components of the vaccine at the molecular level. In this paper, we will present a one-dimensional grating of InGaAs as a prospect grating structure for UV–VIS spectrometer that can be used for mRNA vaccine development. The main parameters and the wavelength region used in mRNA vaccine development lies in the range of 200 nm to 700 nm (UV–VIS Range). The incorporation of new materials that are excellent for cutting-edge semiconductor industry procedures for MEMS manufacture, as well as new optimal parameters, will improve the grating and spectrometer’s performance which will enhance the mRNA vaccine development and manufacturing workflows enabled by UV–VIS spectroscopy. Hence we evaluated the feasibility of the materials, Si (Silicon), GaN (Gallium Nitride), InGaAs (Indium Gallium Arsenide) and InP (Indium Phosphide) as a grating material. Reflection spectrum of the proposed structure shows 48% increase compared to the grating made up of Silicon. In order to model wave propagation in one grating unit cell, electromagnetic waves frequency domain interface is used. The periodic constraints of floquet periodicity are used for simulation at both faces of the unit cell. The reflectance of grating with each material as functions of the angle of incidence was plotted. Also we evaluated the effect of grating thickness, groove density, spectral resolution and efficiency over different materials namely Si, GaN, InGaAs and InP. After optimizing geometric parameters, the designed InGaAs based grating achieved a efficiency of 87.45% and can be a reliable prospect for mRNA based vaccine development.

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“…[21,22] As well, they are used as dyes and pigments. [23] Gadolinium (Gd)-doped metal oxides or other inorganic compounds are endowed with aspirational applications in material science domain such as photocatalysts for degradation of pollutants, [24] for enhancing optical, thermoelectric, [25] magnetoelectric, [26] superconducting, [27] and gas sensing properties. [28] As well, Gd-based materials are used for engineering fuel, [29] and solar cells, [30] along with hydrogen production, [31] and their role as contrasting agents in magnetic resonance imaging (MRI) for clinical treatment.…”

Section: Introductionmentioning

confidence: 99%

New Gd(I)/Cs(III) complexes of benzil‐based thiocarbohydrazone macrocyclic ligand: Chemical synthesis, characterization, and study their biological effectiveness as antibacterial, antioxidant, and antiviral additives for polyurethane surface coating

Eliwa

Elgammal

Sharaf

et al. 2022

Applied Organom Chemis

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Germs are transmitted in different ways and remain viable or infectious on metal, glass, wood, fabrics, and plastic surfaces for prolonged periods of time. Thus, sterilizing commonly handled everyday objects and public places with high contamination potential is a major global strategy to combat the spread of pathogenic microorganisms. Consequently, our response is development of durable surface‐active coating embedded with new Gd(I)/Cs(III) complexes that derived from condensation of thiocarbohydrazide and benzil precursors. Chemical structures of these complexes were elucidated by Fourier transform infrared (FTIR), electron impact ionization (EI‐MS), 1H nuclear magnetic resonance (NMR), elemental analysis, and scanning electron microscopy (SEM). Next, the well‐established complexes were physically mixed with wide‐range applicable polyurethane (PU) varnish as potential biocide agents. With laboratory scale, coating material was loaded into stainless steel and wood panels to evaluate the physical and mechanical properties. In comparison with the blank formulation, our additives enhanced the gloss levels of the developed PU from 75 to 80 gloss unit (GU), and the scratch hardness was increased to reach >2 kg. Meanwhile, all the coated films passed the flexibility bend test and showed none flaking in mechanical adhesion test. Consequently, Gd(I) and Cs(III) metal complexes did not show any undesirable side effects on PU coating performance. Concerning biological screening, macrocyclic Gd(I) and Cs(III) complexes as well as the reformulated PU varnish were assayed for their antibacterial, antioxidant, and antiviral activities. Antibacterial activity of the developed PU was slightly increased than the individual treatments of Gd(I)/Cs(III) complexes by 1–2 mm, although the blank PU showed no obvious activity against all the tested bacterial strains. Antiviral overall results indicated that the Gd(I) and Cs(III) complexes demonstrated higher activity than the developed PU samples against ADeno‐7, CV‐B4, and HSV‐1 viruses in all modes of action, and hence these coordinated compounds could be promising virucidal agents with good biocompatibility.

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Optical and Thermoelectric properties of Gd doped Wurtzite GaN

Cited by 16 publications

References 36 publications

Improving optical properties of wurtzite GaN with C and Fe co-doping: A DFT+U study

Improving optical properties of wurtzite GaN with C and Fe co-doping: A DFT+U study

InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research

New Gd(I)/Cs(III) complexes of benzil‐based thiocarbohydrazone macrocyclic ligand: Chemical synthesis, characterization, and study their biological effectiveness as antibacterial, antioxidant, and antiviral additives for polyurethane surface coating

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