Optical and thermoelectric properties of chalcogenide based Cu2NiSnS4 nanoparticles synthesized by a novel hydrothermal route

Sarkar, Samrat; Das, Biswajit; Midya, Priyanka R.; Das, G. C.; Chattopadhyay, Kalyan Kumar

doi:10.1016/j.matlet.2015.03.083

Cited by 52 publications

(33 citation statements)

References 13 publications

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“…Besides, the CNTS thin films exhibit a cubic structure in the space group F-43m. The above results coincide with the values reported by the Joint Committee on Powder Diffraction Standards (JCPDS) card number 00-026-0552 and also agree with the previous works reported by other authors [1,6,13].…”

Section: Characterization Of Cnts Thin Filmssupporting

confidence: 93%

“…Copper-nickel-tin-sulfur (Cu 2 NiSnS 4 ), one of the quaternary semiconductor materials, has been the focus of attention in recent years since its constituent elements are inexpensive, environmentally benign and widely existing in nature. Other important advantages, the CNTS material with p-type conductivity [1] has a high optical absorption coefficient [10 4 -10 5 cm −1 ] in the visible region and suitable direct optical band gap in the range of 1.1-1.5 eV [2]. These excellent properties enable to CNTS material to be used as an absorber in low-cost solar cells.…”

Section: Introductionmentioning

confidence: 99%

“…These excellent properties enable to CNTS material to be used as an absorber in low-cost solar cells. In the literature, CNTS materials have been synthesized by several methods such as electrodeposition [3,4], solvothermal [5][6][7], hydrothermal [1], hot injection [2], electrospinning [8], spin coating [9] and spray pyrolysis [10,11]. This study focused on describing the chemical spray pyrolysis technique.…”

Section: Introductionmentioning

confidence: 99%

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One-step spray of Cu2NiSnS4 thin films as absorber materials for photovoltaic applications

Dridi

Bitri

Mahjoubi

et al. 2020

J Mater Sci: Mater Electron

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A simple one-step «Spray Pyrolysis» technique was developed for preparing Cu 2 NiSnS 4 (CNTS) thin film followed by an annealing treatment process. Originally, the spray technique was successfully used to deposit the thin film onto glass substrate at 250 °C for 60 min spray duration. Again, the deposited thin film was annealed in a sulfur atmosphere at a temperature of 500 °C during 30 min. The sulfured thin film exhibits (111), (220) and (311) orientations correspond well to the cubic CNTS structure and other impurity compounds. The SEM data exhibit a uniform, rough and compact topography of CNTS thin films with an average-thickness of 1.36 µm. The absorption coefficient is found to be higher than 10 4 cm −1 in the visible region while the direct band energy of 1.62 eV, which is eminently suitable for use as an absorber in the solar cell. The complex impedance diagrams indicate the decrease of resistance by increasing temperature, which attributes to a semiconductor behavior. The close values of activation energies 0.63 and 0.54 eV determined from both angular frequency and DC conductivity indicate that the carrier transport mechanism is thermally activated.

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Section: Characterization Of Cnts Thin Filmssupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

One-step spray of Cu2NiSnS4 thin films as absorber materials for photovoltaic applications

Dridi

Bitri

Mahjoubi

et al. 2020

J Mater Sci: Mater Electron

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“…Nevertheless, CNTS has been synthesized through various synthesis method such as hot-injection, solvothermal and hydrothermal to obtain nanoparticle CNTS [142,[170][171][172][173][174]. CNTS has an energy band gap of 1.5∼1.6 eV similar to CZTS and a high optical absorption coefficient of ∼10 6 cm −1 [142,[170][171][172][173][174]. CNTS exhibits the zincblende crystal structure while a complementary theoretical calculation predicts the P4̅ 2c polytype as the most thermodynamically stable phase [175].…”

Section: Nickel (Ni)mentioning

confidence: 99%

Doping and alloying of kesterites

et al. 2019

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Attempts to improve the efficiency of kesterite solar cells by changing the intrinsic stoichiometry have not helped to boost the device efficiency beyond the current record of 12.6%. In this light, the addition of extrinsic elements to the Cu 2 ZnSn(S,Se) 4 matrix in various quantities has emerged as a popular topic aiming to ameliorate electronic properties of the solar cell absorbers. This article reviews extrinsic doping and alloying concepts for kesterite absorbers with the focus on those that do not alter the parent zinc-blende derived kesterite structure. The latest state-of-the-art of possible extrinsic elements is presented in the order of groups of the periodic table. The highest reported solar cell efficiencies for each extrinsic dopant are tabulated at the end. Several dopants like alkali elements and substitutional alloying with Ag, Cd or Ge have been shown to improve the device performance of kesterite solar cells as compared to the nominally undoped references, although it is often difficult to differentiate between pure electronic effects and other possible influences such as changes in the crystallization path, deviations in matrix composition and presence of alkali dopants coming from the substrates. The review is concluded with a suggestion to intensify efforts for identifying intrinsic defects that negatively affect electronic properties of the kesterite absorbers, and, if identified, to test extrinsic strategies that may compensate these defects. Characterization techniques must be developed and widely used to reliably access semiconductor absorber metrics such as the quasi-Fermi level splitting, defect concentration and their energetic position, and carrier lifetime in order to assist in search for effective doping/alloying strategies.

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“…The high conversion efficiency of CNTS solar cell absorber layer is 8.2 % achieved by Lu et al in 2018 [18], this efficiency is near to high efficiency of CZTS absorber material and motive the effort in CCTS compound. Various methods are applied for synthesis CNTS thin films such as: spray pyrolysis [19], electrodeposition [20], solvothermal [21], hydrothermal [22], hot injection [23], spin coating [24], dip-coating [25]. Some groups are studied CNTS thin layers by different preparation methods, Chen et al elaborate uniform Cu 2 NiSnS 4 thin layer by electrochemical deposition method and obtain a cubic zinc blend structure, great absorption coefficient and optical energy gap approximated to be 1.2 eV [26].…”

Section: Introductionmentioning

confidence: 99%

Effect of dip-coating cycle on some physical properties of Cu2NiSnS4 thin films for photovoltaic applications

Ziti

Hartiti

Belafhaili

et al. 2021

J Mater Sci: Mater Electron

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Quaternary semiconductor Cu 2 NiSnS 4 thin film was made by the sol-gel method associated to dip-coating technique on ordinary glass substrates. In this paper, we have studied the impact of dip-coating cycle at different cycles: 4, 5 and 6 on the structural, compositional, morphological, optical and electrical characteristics. CNTS thin films have been analyzed by various characterization techniques including: X-ray diffractometer (XRD), Raman measurements, scanning electron microscope (SEM), energy dispersive X-ray spectroscope (EDS), UV-visible spectroscopy and four-point probe method. XRD spectra demonstrated the formation of cubic Cu 2 NiSnS 4 with privileged orientation at (111) plane. Crystallite size of cubic CNTS thin films increase with from 6.30 to 9.52 with dip-coating cycle augmented.Raman scattering confirmed the existence of CNTS thin films by Raman vibrational mode positioned at 332 cm -1 . EDS investigations showed near-stoichiometry of CNTS sample deposited at 5 cycles. Scanning electron microscope showed uniform surface morphologies without any crack. UV-visible spectroscopy indicated that the optical absorption values are larger than 10 4 cm -1 , Estimated band gap energy of CNTS absorber layers decrease from 1.64 to 1.5 eV with dip-coating cycle increased. The electrical conductivity of CNTS thin films increase from 0.19 to 4.16 (Ω. cm) −1 . These characteristics are suitable for solar cells applications.

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Optical and thermoelectric properties of chalcogenide based Cu2NiSnS4 nanoparticles synthesized by a novel hydrothermal route

Cited by 52 publications

References 13 publications

One-step spray of Cu2NiSnS4 thin films as absorber materials for photovoltaic applications

One-step spray of Cu2NiSnS4 thin films as absorber materials for photovoltaic applications

Doping and alloying of kesterites

Effect of dip-coating cycle on some physical properties of Cu2NiSnS4 thin films for photovoltaic applications

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