Optical and thermal spectroscopy of vanadium-doped CdTe and related photorefractive effect

Rzepka, E.; Aoudia, A.; Cuniot, M.; Lusson, A.; Marfaing, Y.; Triboulet, R.; Brémond, G.; Marrakchi, G.; Cherkaoui, Karim; Busch, M.C.; Koebel, J.M.; Hage‐Ali, M.; Siffert, P.; Moisan, J.Y.; Gravey, Philippe; Wolffer, N.; Moine, Olivier Le

doi:10.1016/0022-0248(94)90815-x

Cited by 27 publications

(9 citation statements)

References 11 publications

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“…9), is assigned to a transition to an excited state [ 4 T 1 ( 4 P)], which is resonant with the conduction band. 3,28 These attributions for the spinallowed bands of V 2ϩ appear to be a clear confirmation of the previous ones. 10 Band P 1 , which occurs at ϳ1.15 eV in the MCD and absorption spectra of B19 and B23, is absent (or at best too weak to be detected) in those of B28.…”

Section: A Spectroscopic Assignmentssupporting

confidence: 87%

Correlations between microscopic properties and the photorefractive response for vanadium-doped CdTe

et al. 1996

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We present a summary of the experimental results, the attempts of interpretation at the present stage, and the conclusions of coupled investigations on semi-insulating, n-type and p-type vanadium-doped CdTe crystals. Combining electron paramagnetic resonance and magnetic circular dichroism permits the monitoring and the quantitative assessment of [ V 2ϩ ] and [ V 3ϩ ] defect concentrations. Photoabsorption results are presented and are discussed in terms of photoionization processes at various wavelengths. The temperature and the spectral dependence of the steady-state photoconductivity are carefully studied in the near infrared. The results are discussed in terms of electronic transitions for the two vanadium charge states. Finally, the photorefractive performances of the semi-insulating sample are analyzed in a two-beam-coupling experiment and are correlated to the properties of the V 2ϩ /V 3ϩ donor states to derive photoionization cross sections.

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Section: A Spectroscopic Assignmentssupporting

confidence: 87%

Correlations between microscopic properties and the photorefractive response for vanadium-doped CdTe

et al. 1996

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“…Furthermore, CdTe presents a high electrooptic coefficient r 41 and a large figure of merit n 3 0 r 41 /ε r as well [3,4]. Realization of the photorefractive effect with this material in this technologically important spectral range has been performed with good efficiency in pure CdTe:V or mixed (Cd, Zn)Te:V samples [1,5]. To optimize these results, an understanding of the photorefractive effect in this material is important.…”

Section: Introductionmentioning

confidence: 99%

Role of zinc in the optical properties of vanadium-doped CdZnTe

Dammak

Alaya

Brémond

et al. 1997

Semicond. Sci. Technol.

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High-resistivity vanadium-doped CdTe and CdZnTe crystals were investigated by photoluminescence in the near-infrared spectral range. The observed shift of the near band edge luminescence with respect to the sample position along the ingot is explained in terms of a non-uniform distribution of zinc. Two deep luminescence bands were detected at around 0.8 eV and 1 eV. The electron-phonon interaction strengths (Huang-Rhys parameter S ) of the two related centres have been estimated and a configuration coordinate diagrams proposed. The 0.8 eV emission band is assigned to the electrically active E C − 0.95 eV centre. The double peaked shape of the 0.8 eV emission band is a result of either an overlap between two emissions bands or the Jahn-Teller effect including a small quadratic effect. In the framework of the first hypothesis, the emission band is interpreted as a combination of two simultaneous recombination processes: the V 2+ internal transition and the conduction band → V 2+ level transition.

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“…E. g., the authors of [10] observed an increase in photoconductivity of CdTe:V in the range of 0.82 1.4 µm at 300 K. The main band of photoconductivity was said to decrease at hν < 1.1 eV. In [13], it was reported on the existence of another band with its maximum at 1.1 eV revealed in the 123 K photoconductivity spectrum of CdTe:V crystal with vanadium concentration in a liquid phase 1⋅10 19 cm 3 . The authors associate the occurrence of this band with photoionization of V 2+ Cd ion via its 4 T 1 ( 4 P) exited states.…”

Section: Resultsmentioning

confidence: 99%

Solid solutions of CdxHg1–xTe:V:Mn, CdxHg1–xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties

Paranchych¹

2004

Semicond. Phys. Quantum Electron. Optoelectron.

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Single crystals of Cd x Hg 1x Te:V:Mn, Cd x Hg 1x Te:V: Mn (x = 0.90.95) with different concentrations of vanadium, titanium and manganese have been obtained via the modified Bridgman method and their optical, photoelectrical and galvano-magnetic properties have been studied. According to the performed investigations, the grown crystals proved to be satisfactorily homogeneous and highly sensitive within technically important spectral range of 11.5 µm. Energy position of vanadium and titanium level in the material under investigation determined from R(T) dependence is of about 0.730.82 eV; 0.650.72 eV, respectively.

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Optical and thermal spectroscopy of vanadium-doped CdTe and related photorefractive effect

Cited by 27 publications

References 11 publications

Correlations between microscopic properties and the photorefractive response for vanadium-doped CdTe

Correlations between microscopic properties and the photorefractive response for vanadium-doped CdTe

Role of zinc in the optical properties of vanadium-doped CdZnTe

Solid solutions of CdxHg1–xTe:V:Mn, CdxHg1–xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties

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