Optical and structural properties of epitaxial GaN films grown by pulsed laser deposition

Huang, T. F.; Marshall, A. F.; Spruytte, S.G.; Harris, James S.

doi:10.1016/s0022-0248(98)01094-x

Cited by 22 publications

(13 citation statements)

References 14 publications

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“…Instead, it is attributed to the less commonly observed Y 2 line, 49 normally detected at 3.40 eV, but, again, the emission can be shifted toward lower energy due to tensile stress. The Y 2 line is reported to be influenced by acceptor doping 49 (like carbon) and is strongly related to stacking faults parallel to the substrate/film interface, 50,51 which originate from the overgrowth in the lateral direction of GaN islands with different altitudes, as described above in Sec. III C. The broad peak in the lower energy section of Fig.…”

Section: Influence On Optical Propertiesmentioning

confidence: 87%

Realising epitaxial growth of GaN on (001) diamond

Dreumel

Tinnemans

Heuvel

et al. 2011

Journal of Applied Physics

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By an extensive investigation of the principal growth parameters on the deposition process, we realized the epitaxial growth of crystalline wurtzite GaN thin films on single crystal (001) diamond substrates by metal organic chemical vapor deposition. From the influence of pressure, V/III ratio, and temperature, it was deduced that the growth process is determined by the mass-transport of gallium precursor material toward the substrate. The highest temperature yielded an improved epitaxial relationship between grown layer and substrate. X ray diffraction (XRD) pole figure analysis established the presence of two domains of epitaxial layers, namely (0001) h10 10i GaN k (001) [110] diamond and (0001) h10 10i GaN k (001) ½1 10 diamond, which are 90 rotated with respect to each other. The presence of these domains is explained by the occurrence of areas of (2 Â 1) and (1 Â 2) surface reconstruction of the diamond substrate. When applying highly misoriented diamond substrates toward the [110] diamond direction, one of the growth domains is suppressed and highly epitaxial GaN on (001) diamond is realized.

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Section: Influence On Optical Propertiesmentioning

confidence: 87%

Realising epitaxial growth of GaN on (001) diamond

Dreumel

Tinnemans

Heuvel

et al. 2011

Journal of Applied Physics

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“…2͑a͒, indicating that it is not due to an oxygen impurity as previously suggested. 6 The 3.368 and 3.310 eV transitions, labeled I 3 and I 4 , respectively, 15 are strongly enhanced for the GaN samples grown on GaAs͑100͒ ͓Fig.…”

mentioning

confidence: 98%

“…[2][3][4] Pulsed-laser deposition ͑PLD͒ was also used successfully to grow GaN. [5][6][7][8][9][10] Previous research on GaN has focused on epitaxial growth of hexagonal GaN on sapphire͑0001͒, [5][6]8,10 fused silica, or Si substrates, 9 and cubic GaN on GaAs͑001͒ substrates. 2,11,12 However, PLD was never used to grow GaN on a GaAs͑001͒ substrate.…”

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confidence: 99%

Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition

Mah

Mosnier

McGlynn

et al. 2002

Applied Physics Letters

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Epitaxial GaN films of thickness ∼1 μm have been grown on sapphire(0001) and GaAs(001) substrates using the liquid-target pulsed-laser-deposition technique in a 5 Torr nitrogen atmosphere. Detailed x-ray diffraction and photoluminescence studies were carried out for both types of samples. Significantly enhanced low-temperature photoluminescence emissions at 3.368 eV (I3) and 3.310 eV (I4) were observed for the material deposited on a GaAs(001) substrate at ∼800 °C. We propose a model to explain the emission mechanism for both lines in which the electrons and holes are confined in cubic inclusions within the hexagonal material, analogously to a type-I quantum well.

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“…The surface of this sample is rougher than other PLD films due to the high growth rate (~0.8 nm/sec) and the high nitrogen pressure used for deposition (400 mTorr). It has been observed that the increase of the background gas pressure causes a decrease in the velocity of the species in the plasma plume [12]; hence, the films grown at high pressure conditions are likely to exhibit more defects than those deposited at lower pressures [13]. Additionally, the film was grown directly on sapphire (no buffer layer) so that consequently the film is strained.…”

Section: Resultsmentioning

confidence: 99%

Eu³⁺ activated GaN thin films grown on sapphire by pulsed laser deposition

Perea-López

Tao

McKittrick

et al. 2008

Phys. Status Solidi (c)

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By means of pulsed laser deposition, polycrystlline thin films of GaN doped with Eu3+ were grown on sapphire. The PLD target was formed in three steps. First, stoichiometric amounts of Ga2O3 and Eu2O3 were dissolved in nitric acid, which produces Ga(1–x)Eux (NO3)3. Next, the nitrates were oxidized in a tubular furnace with O2 flow forming Ga2(1–x)Eu2x O3. Finally, the oxide powder was flushed with anhydrous ammonia to produce the desired nitride product: Ga(1–x)Eux N. Film growth was done in a stainless steel vacuum chamber partially filled with N2 (400 mTorr). For the deposit, the 3rd harmonic of a Nd:YAG laser (λ = 355 nm) was focused on the surface of the target. After deposition, annealing in NH3 was required to produce films with pure GaN hexagonal phase. The luminescence of the film was characterized by photo‐ and cathodoluminescence. In addition, the chemical and structural properties were analyzed by X‐ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Optical and structural properties of epitaxial GaN films grown by pulsed laser deposition

Cited by 22 publications

References 14 publications

Realising epitaxial growth of GaN on (001) diamond

Realising epitaxial growth of GaN on (001) diamond

Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition

Eu³⁺ activated GaN thin films grown on sapphire by pulsed laser deposition

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Optical and structural properties of epitaxial GaN films grown by pulsed laser deposition

Cited by 22 publications

References 14 publications

Realising epitaxial growth of GaN on (001) diamond

Realising epitaxial growth of GaN on (001) diamond

Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition

Eu3+ activated GaN thin films grown on sapphire by pulsed laser deposition

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Eu³⁺ activated GaN thin films grown on sapphire by pulsed laser deposition