2001
DOI: 10.1016/s0168-583x(00)00633-9
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Optical and structural properties of 6H–SiC implanted with silicon as a function of implantation dose and temperature

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Cited by 21 publications
(16 citation statements)
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“…Figure 4a shows a decrease in RRI from its maximum value of 1 in the non-implanted sample to the value of 0.30 in the sample implanted at fluence of 1 × 10 14 ions/cm 2 . Increased amount of defects with increasing fluence is the reason behind the reduction in the value of RRI, which is in agreement with a previous study [46]. The total disorder, which quantifies the damage of the crystallinity of materials is defined as 1-A norm .…”
Section: I(d) I(g)supporting
confidence: 90%
See 1 more Smart Citation
“…Figure 4a shows a decrease in RRI from its maximum value of 1 in the non-implanted sample to the value of 0.30 in the sample implanted at fluence of 1 × 10 14 ions/cm 2 . Increased amount of defects with increasing fluence is the reason behind the reduction in the value of RRI, which is in agreement with a previous study [46]. The total disorder, which quantifies the damage of the crystallinity of materials is defined as 1-A norm .…”
Section: I(d) I(g)supporting
confidence: 90%
“…The relative Raman intensity which is denoted as RRI is the ratio between the average intensity of the first order Raman modes in the ion-implanted sample and that of the pristine sample [46]. Figure 4a shows a decrease in RRI from its maximum value of 1 in the non-implanted sample to the value of 0.30 in the sample implanted at fluence of 1 × 10 14 ions/cm 2 .…”
Section: I(d) I(g)mentioning
confidence: 98%
“…Raman scattering spectrometry technology is widely performed to investigate ions implanted SiC, and it can precisely characterize the evolution of lattice damage with an implantation dose, similar to the result obtained via Rutherford backscattering in channeling geometry. [12][13][14][15][16] Furthermore, Raman scattering spectrometry is sensitive to a low defect concentration via the decrease in Raman scattering intensity, broadening of phonon Raman bands, and frequency shift. [12] In this study, confocal Raman scattering spectroscopy and photoluminescence spectrum are employed to investigate the H + 2 -implanted 6H-SiC followed by thermal annealing.…”
Section: Introductionmentioning
confidence: 99%
“…In this work, we present Raman and UV-visible spectroscopic studies on Si 3þ n He þ ions coimplanted in single crystal 6H-SiC and FTIR was also obtained to analyze the typical structural properties. Si ions were chosen to weaken chemical structure change effects in SiC [17] and self-ion irradiation can avoid foreign species act as trapping sites for helium [18].…”
Section: Introductionmentioning
confidence: 99%