Optical and structural properties of 6H–SiC implanted with silicon as a function of implantation dose and temperature

Héliou, R; Brebner, J. L.; Roorda, S.

doi:10.1016/s0168-583x(00)00633-9

Cited by 21 publications

(16 citation statements)

References 7 publications

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“…Figure 4a shows a decrease in RRI from its maximum value of 1 in the non-implanted sample to the value of 0.30 in the sample implanted at fluence of 1 × 10 14 ions/cm 2 . Increased amount of defects with increasing fluence is the reason behind the reduction in the value of RRI, which is in agreement with a previous study [46]. The total disorder, which quantifies the damage of the crystallinity of materials is defined as 1-A norm .…”

Section: I(d) I(g)supporting

confidence: 90%

“…The relative Raman intensity which is denoted as RRI is the ratio between the average intensity of the first order Raman modes in the ion-implanted sample and that of the pristine sample [46]. Figure 4a shows a decrease in RRI from its maximum value of 1 in the non-implanted sample to the value of 0.30 in the sample implanted at fluence of 1 × 10 14 ions/cm 2 .…”

Section: I(d) I(g)mentioning

confidence: 98%

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Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

et al. 2020

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Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fluence, sp3 defects appeared in EG; higher fluences resulted in vacancy defects as well as in an increased defect density. The increased fluence created a decrease in the intensity of the prominent peak of SiC as well as of the overall relative Raman intensity. The X-ray photoelectron spectroscopy (XPS) showed a reduction of the peak intensity of graphitic carbon and silicon carbide as a result of ion implantation. The dopant concentration and level of defects could be controlled both in EG and SiC by the fluence. This provided an opportunity to explore EG/SiC as a platform using ion implantation to control defects, and to be applied for fabricating sensitive sensors and nanoelectronics devices with high performance.

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Section: I(d) I(g)supporting

confidence: 90%

Section: I(d) I(g)mentioning

confidence: 98%

Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

et al. 2020

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“…Raman scattering spectrometry technology is widely performed to investigate ions implanted SiC, and it can precisely characterize the evolution of lattice damage with an implantation dose, similar to the result obtained via Rutherford backscattering in channeling geometry. [12][13][14][15][16] Furthermore, Raman scattering spectrometry is sensitive to a low defect concentration via the decrease in Raman scattering intensity, broadening of phonon Raman bands, and frequency shift. [12] In this study, confocal Raman scattering spectroscopy and photoluminescence spectrum are employed to investigate the H + 2 -implanted 6H-SiC followed by thermal annealing.…”

Section: Introductionmentioning

confidence: 99%

Optical spectroscopy study of damage evolution in 6H-SiC by H2+ implantation*

Wang¹,

Liao²,

Liu³

et al. 2021

Chinese Phys. B

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Lattice defects induced by ion implantation into SiC have been widely investigated in the decades by various techniques. One of the non-destructive techniques suitable to study the lattice defects in SiC is the optical characterization. In this work, confocal Raman scattering spectroscopy and photoluminescence spectrum have been used to study the effects of 134-keV H 2 + implantation and thermal treatment in the microstructure of 6H-SiC single crystal. The radiation-induced changes in the microstructure were assessed by integrating Raman-scattering peaks intensity and considering the asymmetry of Raman-scattering peaks. The integrated intensities of Raman scattering spectroscopy and photoluminescence spectrum decrease with increasing the fluence. The recovery of the optical intensities depends on the combination of the implantation temperature and the annealing temperature with the thermal treatment from 700 °C to 1100 °C. The different characterizations of Raman scattering spectroscopy and photoluminescence spectrum are compared and discussed in this study.

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“…In this work, we present Raman and UV-visible spectroscopic studies on Si 3þ n He þ ions coimplanted in single crystal 6H-SiC and FTIR was also obtained to analyze the typical structural properties. Si ions were chosen to weaken chemical structure change effects in SiC [17] and self-ion irradiation can avoid foreign species act as trapping sites for helium [18].…”

Section: Introductionmentioning

confidence: 99%