Optical and structural properties of ZnO nanorods grown on graphene oxide and reduced graphene oxide film by hydrothermal method

Realization of a reduced graphene oxide/ZnO nanorod photodetector, suitable for self-powered applications

“…Fig. 3.d presents the UV-vis spectrum of the grown nanorods by solid curve, which exhibits a sharp absorption edge rise at around 400 nm, which coincides with previous reports [36,40].…”

“…To better investigate the structure of the prepared heterostructure, we have utilized XRD analysis, which is depicted in Fig. 3 [36,42]. It is observable that relative intensity of the (002) reflection of ZnO surpasses others, which indicates the dominant orientation of nanorods along the C-axis.…”

“…It is notable that successful growth of ZnO nanorods on rGO sheets by hydrothermal method has been previously demonstrated, taking advantage of a ZnO seed layer [36]. To prepare the seed layer, the sample is immersed in a solution of zinc acetate dehydrate in ethanol with concentration of 0.005 M, then rinsed by ethanol and annealed at a temperature of 90˚C.…”

Metal Oxide Semiconductors and their Nanocomposites Application Towards Photovoltaic and Photocatalytic

“…Chang et al [105] reported substrates by a seeded solution method. Recently, Ameen et al [106] reported the growth of vertically aligned ZnO on the surface of GO-FTO substrates in which GO thin fi lm was directly grown on FTO substrate by HFCVD technique and applied as photoanode for the application of DSSCs. The GO-ZnO NRs photoanode delivered the solar-to-electricity conversion efficiency of ∼2.5% with enhanced J SC , V OC , and FF.…”

Structure-dependent gas detection ability of clustered ZnS crystallites with heterostructure and tube-like architecture

“…As a major II-VI group semiconductor, zinc oxide (ZnO) has a wide band gap of approximately 3.3 eV at room temperature [4]. ZnO nanostructures can be prepared on a large scale by using a facile hydrothermal method [5], and ZnO nanostructures with various morphologies have been extensively studied for use in gas sensors [6,7]. By contrast, zinc sulfide (ZnS), another II-VI group semiconductor, has a wider band gap (3.7 eV) and has been used in gas and ultraviolet (UV) light sensors [8,9].…”