Optical and Structural Properties of MOCVD Grown InxGa1-xAs Epilayers

Abstract

In x Ga 1-x As layers on undoped InP (100) substrates were grown with Aixtron 200-4 RF/S horizontal Metal Organic Chemical Vapour Deposition (MOCVD) reactor. All the epilayers have been grown with different indium compositions. Thickness of the samples were measured via Scanning Electron Microscopy (SEM). Indium concentrations were defined by High Resolution X-ray Diffraction (HRXRD) and optical measurements were done with spectroscopic ellipsometry in order to obtain refractive index (n) and thickness of the samples. In-situ reflectance is used to measure thickness of samples. Then all of the thicknesses are compared.