Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults

Луценко, Е. В.; Rzheutski, M. V.; Pavlovskii, V. N.; Yablonskii, G. P.; Alanzi, M; Hamidalddin, A.; Alyamani, Ahmed Y.; Mauder, C.; Kalisch, H.; Reuters, B.; Heuken, M.; Vescan, A.; Naresh-Kumar, G.; Trager-Cowan, C.

doi:10.1016/j.jcrysgro.2015.10.036

Cited by 4 publications

(2 citation statements)

References 33 publications

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“…[22][23][24][25] In this work, we demonstrate the application of ECCI to image BSFs in semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN and determine the conditions to maximise the channelling contrast to reveal the BSFs and TDs in different scattering geometries. We have chosen semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) as an example to validate the applicability of using ECCI to characterise BSFs and also due to this material's potential commercial importance especially for long wavelength light emitters.…”

Section: Introductionmentioning

confidence: 99%

Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging

Naresh-Kumar

Thomson

Zhang

et al. 2018

Journal of Applied Physics

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Taking advantage of electron diffraction based measurements, in a scanning electron microscope, can deliver non-destructive and quantitative information on extended defects in semiconductor thin films. In this work, we have studied a (11-22) semi-polar GaN thin film overgrown on regularly arrayed GaN micro-rod array templates grown by metal organic vapour phase epitaxy. We were able to optimise the diffraction conditions to image and quantify basal plane stacking faults (BSFs) and threading dislocations (TDs) using electron channelling contrast imaging (ECCI). Clusters of BSFs and TDs were observed with the same periodicity as the underlying micro-rod array template. The average BSF and TD densities were estimated to be ≈4 × 104 cm−1 and ≈5 × 108 cm−2, respectively. The contrast seen for BSFs in ECCI is similar to that observed for plan-view transmission electron microscopy images, with the only difference being the former acquiring the backscattered electrons and the latter collecting the transmitted electrons. Our present work shows the capability of ECCI for quantifying extended defects in semi-polar nitrides and represents a real step forward for optimising the growth conditions in these materials.

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Section: Introductionmentioning

confidence: 99%

Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging

Naresh-Kumar

Thomson

Zhang

et al. 2018

Journal of Applied Physics

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“…The luminescence around 3.33 eV is related to plane stacking faults (PSFs), 28) and that around 3.41-3.45 eV is related to basal stacking faults (BSFs). 28,29) The specific luminescence of the GaN energy band was not distinguished. In contrast to the PL spectra of the seed crystal, the spectra of S1 and S4 showed a completely different tendency.…”

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confidence: 98%

Fabrication of high-quality GaN substrates using the Na flux method

Maruyama

Nakamura

Che

et al. 2016

Appl. Phys. Express

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Gallium nitride (GaN) substrates fabricated along the nonpolar and semipolar directions are the most promising materials for realizing optical and electronic devices with low power consumption. In this study, we carry out the Na flux growth on -plane GaN templates grown heteroepitaxially on sapphires. The GaN crystals are grown at low supersaturation using the Na flux method with the dipping technique. The crystallinity of the grown GaN crystals is improved compared to that of the seed substrates. Then it improves further by lowering the supersaturation. Finally, we succeed in fabricating a 2-in. -plane GaN single crystal with high transparency and crystallinity.

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Electron channelling contrast imaging for III-nitride thin film structures

Naresh-Kumar¹,

Thomson

Nouf-Allehiani

et al. 2016

Materials Science in Semiconductor Processing

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Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. In this review, we will demonstrate the application of ECCI to the characterisation of III-nitride semiconductor thin films grown on different substrates and with different crystal orientations. We will briefly describe the history and the theory behind electron channelling and the experimental setup and conditions required to perform ECCI. We will discuss the advantages of using ECCI; especially in combination with other SEM based techniques, such as cathodoluminescence imaging. The challenges in using ECCI are also briefly discussed

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Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults

Cited by 4 publications

References 33 publications

Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging

Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging

Fabrication of high-quality GaN substrates using the Na flux method

Electron channelling contrast imaging for III-nitride thin film structures

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