Optical and Structural Properties of Er<sup>3+</sup>-Doped GaN Grown by MBE

Birkhahn, R.; Hudgins, R.; Lee, D. S.; Lee, B.K.; Steckl, A. J.; Saleh, Adli A.; Wilson, R. G.; Zavada, J. M.

doi:10.1557/s1092578300002854

Cited by 5 publications

(7 citation statements)

References 20 publications

(11 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…All samples were grown on (0001) sapphire substrates. This is in sharp contrast to the results of Er-doped GaN obtained by MBE or ion-implantation, which exhibit the dominant intra-4f Er 3+ transitions to be from the 2 H 11/2 (537 nm) and 4 S 3/2 (558 nm) to the 4 I 15/2 ground state [12,15]. The Er doped GaN epilayers were grown in a horizontal reactor at 1040 C. A UV photoluminescence (PL) spectroscopy system was employed to study the optical properties of the Er doped GaN.…”

Section: Methodscontrasting

confidence: 99%

“…Successful incorporation of Er into GaN has been achieved by methods such as ionimplantation, hydride vapor phase epitaxy (HVPE), metal organic molecular beam epitaxy (MOMBE), and molecular beam epitaxy (MBE) [5][6][7][8][9][10][11][12][13][14][15]17]. There have been reports of Er incorporation, leading to devices, such as light emitting diodes (LEDs), that produce wavelengths ranging from the visible to infrared (IR) [6,11,14].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition

et al. 2006

Self Cite

View full text Add to dashboard Cite

GaN is an excellent host for Er due to the low thermal quenching of radiative intra-4f Er 3+ transitions at 1.54 µm. Thus, Er doped GaN structures are promising for emitters and amplifiers operating at the main telecommunication wavelength of 1.54 µm. We report on the experimental study and synthesis of Er doped GaN by metal organic chemical vapor deposition (MOCVD). Photoluminescence (PL) with above and below bandgap excitation energies were employed to study the optical properties of Er doped GaN. PL spectra of these Er doped layers exhibit a strong 1.54 µm emission, corresponding to the intra-4f transition of the 4 I 13/2 (first excited state) to the 4 I 15.2 (ground state) of Er 3+ . Secondary ion mass spectroscopy (SIMS) and xray diffraction (XRD) of the Er doped GaN shows the films to be of high crystalline quality with a high Er concentration (2-3 x 10 21 cm -3 ) and low impurity concentrations. The mechanisms of optical transitions involving different excitation energies, and potential applications of Er doped GaN structures in the communication wavelength are also discussed.Mater. Res. Soc. Symp. Proc. Vol. 955

show abstract

Section: Methodscontrasting

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition

et al. 2006

Self Cite

View full text Add to dashboard Cite

show abstract

“…Therefore, it is very important to show that both ion implantation and in situ incorporation can achieve high RE concentrations and optical activity in GaN. 24 Birkhahn et al have investigated the in situ incorporation of Er from a solid source into GaN during growth by MBE on sapphire 25 and on Si 26 Substrates. GaN films grown on sapphire were coimplanted with Er and O ions.…”

Section: Rare-earth Dopingmentioning

confidence: 99%

“…(b) Red PL from Pr focused-ion-beam-implanted GaN 25. (a) Green EL from in situ -doped GaN .Er LED. '…”

mentioning

confidence: 99%

Optoelectronic Properties and Applications of Rare-Earth-Doped GaN

Steckl¹,

Zavada²

1999

MRS Bull.

275

145

View full text Add to dashboard Cite

As discussed in the accompanying articles in this issue of MRS Bulletin, the optical properties of rare-earth (RE) elements have led to many important photonic applications, including solid-state lasers, components for telecommunications (optical-fiber amplifiers, fiber lasers), optical storage devices, and displays. In most of these applications, the host materials for the RE elements are various forms of oxide and nonoxide glasses. The emission can occur at visible or infrared (IR) wavelengths, depending on the electronic transitions of the selected RE element and the excitation mechanism. Until recently, the study of semiconductors doped with RE elements such as Pr and Er has concentrated primarily on the lowest excited state as an optically active transition. The presence of transitions at IR wavelengths (1.3 and 1.54 μm) that are coincident with minima in the optical dispersion and the loss of silica-based glass fibers utilized in telecommunications, combined with the prospect of integration with semiconductor device technology, has sparked considerable interest.The status and prospects of obtaining stimulated emission in Si:Er are reviewed by Gregorkiewicz and Langer in this issue and by Coffa et al. in a previous MRS Bulletin issue. While great progress is being made in enhancing the emission intensity of Er-doped Si, it still experiences significant loss in luminescence efficiency at room temperature, as compared with low temperatures. This thermal quenching was shown by Favennec et al. to de crease with the bandgap energy of the semiconductor. Hence wide-bandgap semiconductors (WBGSs) are attractive candidates for investigation as hosts for RE doping.

show abstract

“…In the last decade, special attention was given to Er doped IIInitride semiconductors since the thermal quenching of 1.54 m emission intensity is greatly reduced in these materials. 2,9 Different methods have been employed to synthesize Er doped GaN ͑GaN:Er͒, including ion-implantation, 10,11 molecular beam epitaxy, 1,12,13 hydride vapor phase epitaxy, 14 and metal-organic chemical vapor deposition ͑MOCVD͒. 2 In our previous works, [15][16][17] we demonstrated in situ growth of GaN:Er and the related applications of light emitting diodes and erbium doped nitride amplifiers.…”

mentioning

confidence: 99%

Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers

Feng

Sedhain

et al. 2010

Applied Physics Letters

View full text Add to dashboard Cite

Much research has been devoted to the incorporation of erbium (Er) into semiconductors aimed at achieving photonic integrated circuits with multiple functionalities. GaN appears to be an excellent host material for Er ions due to its structural and thermal stability. Er-doped GaN (GaN:Er) epilayers were grown on different templates, GaN/Al2O3, AlN/Al2O3, GaN/Si (111), and c-GaN bulk. The effects of stress on 1.54 μm emission intensity, caused by lattice mismatch between the GaN:Er epilayer and the substrate, were probed. The emission intensity at 1.54 μm increased with greater tensile stress in the c-direction of the GaN:Er epilayers. These results indicate that the characteristics of photonic devices based on GaN:Er can be optimized through strain engineering.

show abstract

Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE

Cited by 5 publications

References 20 publications

Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition

Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition

Optoelectronic Properties and Applications of Rare-Earth-Doped GaN

Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers

Contact Info

Product

Resources

About

Optical and Structural Properties of Er3+-Doped GaN Grown by MBE

Cited by 5 publications

References 20 publications

Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition

Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition

Optoelectronic Properties and Applications of Rare-Earth-Doped GaN

Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers

Contact Info

Product

Resources

About

Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE