Optical and structural characterization of rapid thermal annealed non-stoichiometric silicon nitride film

Singh, Surya Prakash; Srivastava, Pankaj; Prakash, G. Vijaya; Modi, Mohammed H.; Rai, Sanjay; Lodha, G. S.

doi:10.1088/0953-8984/20/33/335232

Cited by 3 publications

(1 citation statement)

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“…Therefore, one can further tune the electrical and optical properties by appropriately choosing the parameters for thermal treatment [12][13][14][15]. In our recent communication, we reported that optical constants and compaction of the film were found to increase after RTA treatment [16].…”

Section: Introductionmentioning

confidence: 99%

Phase stabilization by rapid thermal annealing in amorphous hydrogenated silicon nitride film

Singh

Srivastava

Ghosh

et al. 2009

J. Phys.: Condens. Matter

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We have studied the effect of rapid thermal annealing (RTA) in the context of phase evolution and stabilization in hydrogenated amorphous silicon nitride (a-SiN(x):H) thin films having different stoichiometries, deposited by an Hg-sensitized photo-CVD (chemical vapor deposition) technique. RTA-treated films showed substantial densification and increase in refractive index. Our studies indicate that a mere increase in flow of silicon (Si)-containing gas would not result in silicon-rich a-SiN(x):H films. We found that out-diffusion of hydrogen, upon RTA treatment, plays a vital role in the overall structural evolution of the host matrix. It is speculated that less incorporation of hydrogen in as-deposited films with moderate Si content helps in the stabilization of the silicon nitride (Si(3)N(4)) phase and may also enable unreacted Si atoms to cluster after RTA. These studies are of great interest in silicon photonics where the post-treatment of silicon-rich devices is essential.

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Section: Introductionmentioning

confidence: 99%

Phase stabilization by rapid thermal annealing in amorphous hydrogenated silicon nitride film

Singh

Srivastava

Ghosh

et al. 2009

J. Phys.: Condens. Matter

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Excitation dependent photoluminescence study of Si-rich a-SiNx:H thin films

Bommali

Singh

Rai

et al. 2012

Journal of Applied Physics

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We report photoluminescence (PL) investigations on Si-rich amorphous hydrogenated silicon nitride (a-SiNx:H) thin films of different compositions, using three different excitation lasers, viz., 325 nm, 410 nm, and 532 nm. The as-deposited films contain amorphous Si quantum dots (QDs) as evidenced in high resolution transmission electron microscopy images. The PL spectral shape is in general seen to change with the excitation used, thus emphasizing the presence of multiple luminescence centres in these films. It is found that all the spectra so obtained can be deconvoluted assuming Gaussian contributions from defects and quantum confinement effect. Further strength to this assignment is provided by low temperature (300 °C) hydrogen plasma annealing of these samples, wherein a preferential enhancement of the QD luminescence over defect luminescence is observed.

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