Optical and Structural Characterization of Boron Implanted GaAs

Hayes, M.; Engelbrecht, Jan R.; Neethling, J.H.

doi:10.1149/1.2069536

Cited by 2 publications

(3 citation statements)

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“…The plasma treatment may cause a field that speeds this diffusion process and may lower the energy of formation of SiO 2 and H 2 species. 27 The origin of the enhanced diffusion rate or modification of the energy of formation, however, is still unclear. 26,27 Upon further annealing, the H-related peaks decrease in intensity and are not detected for anneal temperatures greater than 500°C.…”

Section: B Thermally Annealed Samplesmentioning

confidence: 99%

“…27 The origin of the enhanced diffusion rate or modification of the energy of formation, however, is still unclear. 26,27 Upon further annealing, the H-related peaks decrease in intensity and are not detected for anneal temperatures greater than 500°C. The reduction in the H-related peaks can be attributed to several factors, including the evolution of H into non-IR active species such as H 2 , H diffusion into the bulk of the bonded wafer pair or the preferential orientation of H parallel to the bonded interface.…”

Section: B Thermally Annealed Samplesmentioning

confidence: 99%

“…An O 2 plasma treatment followed by a DI H 2 O water rinse is a common activation sequence used in Si hydrophilic bonding. 27 The chemistry changes with thermal annealing of the O 2 plasma-bonded samples was investigated up to an anneal temperature of 600°C. In addition, thermocompression bonding of GaAs-to-GaAs, GaAs-to-SiO 2 /GaAs, and GaAs-to-͑SiO 2 ͒ 0.7 ͑B 2 O 3 ͒ 0.3 /GaAs was investigated.…”

Section: Introductionmentioning

confidence: 99%

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Chemical investigations of GaAs wafer bonded interfaces

Hansen

Albaugh

Moran

et al. 2001

Journal of Applied Physics

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The bonding chemistry of various GaAs-to-oxide/GaAs bonded samples was investigated using multiple internal transmission Fourier transform infrared spectroscopy for thermally annealed and thermocompression annealed samples. The oxides used in these investigations included a native GaAs oxide as well as two compositions of borosilicate glass ͑BSG͒ deposited by low-pressure chemical vapor deposition ͑LPCVD͒. For the thermally annealed samples, the hydrogen-bonded H 2 O/OH groups on the hydrophilic surface form a room temperature bond without the application of pressure. Chemical changes at the wafer-bonded interface occur in two temperature regions. For anneals between 200 and 400°C for 1 h in N 2 , the H 2 O/OH groups react and evolve H that becomes absorbed within the oxide. The LPCVD BSG oxide was chemically unaltered during anneals in this temperature range, however, the GaAs native oxide underwent chemical modification. Initially, the GaAs oxide consisted of As͑III͒-O and Ga-O related oxides. The As͑III͒-O oxides react to form free As and Ga-O during annealing between 200 and 400°C. For anneals between 500 and 600°C, the reaction of H 2 O/OH groups continue and the H becomes infrared inactive, most likely forming H 2 voids at the bonded interface. In addition, As͑V͒-O related oxides were observed during thermal annealing in this temperature range. No detectable chemical changes in the BSG were observed over the temperature range investigated. Samples that were annealed under an estimated 1-10 MPa of pressure had similar chemical changes to thermally annealed samples.

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Section: B Thermally Annealed Samplesmentioning

confidence: 99%

Section: B Thermally Annealed Samplesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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