“…Exceptional electronic structure of two-dimensional (2D) materials such as graphene-like analogues, transition-metal dichalcogenides (TMD), group-III monochalcogenides and Bi bilayer topological insulators have attracted great attentions for comprehensive applications incorporating magnetic sensing, data storage, and zeroloss electronic devices, which are highly promised to substitute current silicon-based semiconductor in future nanoelectronics. [1][2][3][4] Nanostructured 2D materials, such as h-BN, MoS 2 and Bi-bilayer, with controllable edge-states in atomic scales enable their electronic devices to be integrated in high compact and stability, and more sensitive to accurate controls. [5][6][7] For the one-dimensional (1D) nanoribbon or nanowires of these 2D materials, the magnetic domain boundaries can be controlled accurately due to magnetic anisotropy in dismiss of atomic neighbors, accounting for their topological, magnetic and electron-transport properties that highly sensitive to lattice strain, magnetic order, and voltage bias.…”