Optical and structural characteristics of Ga-doped ZnO films

Novodvorsky, O. A.; Gorbatenko, L. S.; Panchenko, V. Ya.; Храмова, О. Д.; Cherebilo, Ye. A.; Wenzel, Christian; Bartha, Johann W.; Бублик, В. Т.; Щербачев, К. Д.

doi:10.1134/s1063782609040034

Cited by 33 publications

(11 citation statements)

References 24 publications

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“…where hν is the photon energy, A is a constant, E g is the optical band gap, n is a number that determined by the nature of transition and has values of 2 and 1/2 for indirect and direct transitions, respectively. And α is the optical absorption coefficient and can be calculated using the formula [24]:…”

Section: Surface Morphologymentioning

confidence: 99%

Photocarrier dynamic measurement of rutile TiO2 films prepared by RF magnetron reactive sputtering

Wan

Wang

et al. 2017

Journal of Alloys and Compounds

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In this work, rutile titanium dioxide (TiO 2) films were prepared on quartz and SiO 2 /Si substrates utilizing RF magnetron reactive sputtering technology. Crystal structure, surface morphology and optical property of these films were characterized to verify the obtainment of well crystalline rutile TiO 2 films. The dynamics of photocarriers were studied by using temporally resolved transient absorption measurements. The differential reflectivity as a function of pump fluence was investigated. We also directly obtained a carrier lifetime of about 286 ps. The absorption cross-section and the absorption coefficient of free carrier at 800 nm were 1.87×10-17 cm 2 and 32.9 cm-1 , respectively.

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Section: Surface Morphologymentioning

confidence: 99%

Photocarrier dynamic measurement of rutile TiO2 films prepared by RF magnetron reactive sputtering

Wan

Wang

et al. 2017

Journal of Alloys and Compounds

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“…Various techniques have been used to synthesize ZnO nanoparticles, for example chemical vapor deposition [24], pulse laser deposition [25], molecular beam epitaxy [26], sol-gel [27] and chemical bath deposition (CBD) [28,29,30]. In this study we report on the synthesis, structural and optical properties of pure and Sm doped ZnO nanorods using CBD.…”

Section: Introductionmentioning

confidence: 99%

Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition

Ahmed

Mwankemwa

Carleschi

et al. 2018

Materials Science in Semiconductor Processing

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In this study, pure and Sm doped ZnO nanorods from 0.0 to 5.5 at.% were synthesized using the chemical bath deposition method at 90 • C. The effect of Sm doping of ZnO nanorods on their structural, morphology and optical properties were investigated. X-ray diffraction patterns revealed that Sm had been successfully incorporated into the ZnO lattice and no other impurities or Sm oxide phases were detected. Field emission scanning electron microscopy images showed that the growth rate of the nanorods was suppressed by Sm doping. Room temperature Raman scattering spectroscopy revealed that the relative intensity of E 2 (high) mode decreased and shifted slightly towards a lower wavenumber in Sm doped ZnO when compared to the undoped ZnO nanorods. The photoluminescence spectrum of as-synthesized Sm-doped samples measured at room temperature shows that the UV emission is slightly red shifted and the green-yellow emission of the visible emission is enhanced, when compared to undoped samples. Photoluminescence studies also revealed the good crystal quality of the as-synthesized samples as all sample shows strong ultraviolet and weak deep-level emission peaks. The as-synthesized samples were also characterized using X-ray photoelectron spectroscopy that revealed the presence of Zn and O in all samples and a small amount of Sm in 5.5 at.% Sm doped ZnO was detected. Furthermore, the current-voltage characteristics of a fabricated Schottky diodes showed a good rectifying behavior when ZnO doped with Sm at 1.5 at.%. The obtained Schottky barrier height for pure and Sm doped ZnO nanorods were 0.55 eV and 0.72 eV, respectively.

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“…Transmittance of GZO thin films can be over 80% in visible light range and electrical resistivity as low as 10 À3 X cm. [13][14][15] These advantages have stimulated researchers to grow GZO thin films and develop GZO based photodetectors. [16][17][18] In this article, we report a type of efficient MSM UV detectors fabricated by using GZO thin films on sapphire substrates.…”

mentioning

confidence: 99%

Effects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors

Yang

Wang

et al. 2013

Journal of Applied Physics

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Effect of thermal treatment on the performance of ZnO based metal-insulator-semiconductor ultraviolet photodetectors Appl. Phys. Lett. 97, 031116 (2010); Gallium nitride metal-semiconductor-metal photodetectors prepared on silicon substratesMetal-semiconductor-metal ultraviolet photodetectors were fabricated by using the sputtered Ga-doped ZnO (GZO) thin films on sapphire substrate as an active layer. Current-voltage (I-V) and opto-electrical characteristics of the devices were investigated. It is found that the peak optical responsivity of the devices can be significantly improved by selecting appropriate thermal annealing temperature, i.e., from 12.0 A/W (annealed at 500 C) and 54.0 A/W (700 C). Furthermore, dark current of the devices drops by two orders of magnitude after annealing process. The significant improvement in performance of the device is ascribed to the removal of massive defect centers of the GZO thin films and increase of Schottky barrier height between the GZO and metal electrodes after thermal annealing at appropriate temperatures. V C 2013 American Institute of Physics. [http://dx.

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Optical and structural characteristics of Ga-doped ZnO films

Cited by 33 publications

References 24 publications

Photocarrier dynamic measurement of rutile TiO2 films prepared by RF magnetron reactive sputtering

Photocarrier dynamic measurement of rutile TiO2 films prepared by RF magnetron reactive sputtering

Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition

Effects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors

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