Optical and scintillation properties of ZnO translucent ceramics annealed at different temperatures

Annealing Temperature Dependence of Scintillation Properties of Ga-doped ZnO Translucent Ceramics

“…This value is reasonable compared with the peak wavelength range (500-550 nm) of defect-related luminescence in non-doped ZnO ceramics. (50) Although the samples showed different colors depending on the annealing temperature under 365 nm UV light, as shown in Fig. 1(b), all samples showed similar spectral shapes.…”

“…(52) We have also confirmed that the peak position of defect-related luminescence in non-doped ZnO (500-550 nm) depends on the preparation conditions. (50) Therefore, the peak position can change with the existence ratio of several defects due to impurity ion doping. In the present study, ZnO:Ga ceramics showed an emission peak at around 500 nm.…”

“…These values are higher than that of the In-doped ZnO thin film (625 photons/5.5 MeV-α); (56) however, they are lower than that of the non-doped ZnO translucent ceramic (44200 photons/5.5 MeV-α). (50)…”

“…The sintering conditions were the same as those of non-doped ZnO in the previous study. (50) Two ZnO:Ga translucent ceramics were prepared under the same conditions. The surfaces of the ceramics were polished to a thickness of about 0.5 mm.…”

“…The non-doped ZnO translucent ceramics were annealed at temperatures from 600 to 800 °C in steps of 50 °C in air to optimize the scintillation properties. (50) Defect-related luminescence was observed in the samples, and the highest scintillation LY among the non-doped ZnO translucent ceramics was 44,000 photons/5.5 MeV-α. Thus, a ZnO translucent ceramic with a high LY was obtained.…”