Optical and photoluminescent properties of sol-gel Al-doped ZnO thin films

Wang, Mingsong; Lee, Ka Eun; Hahn, Sung Hong; Kim, Eui Jung; Kim, Sunwook; Chung, Jin Suk; Shin, Eun Woo; Park, Chinho

doi:10.1016/j.matlet.2006.06.065

Cited by 164 publications

(51 citation statements)

References 24 publications

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“…It has been found earlier [15] that increasing the Al component results in a widening of E g due to the lower degree of crystallization and/or formation of Zn-Al-O phases. The optical band gap values of the films studied by us agree with the data reported in [16]. On the other hand, the band gap values of all sol-gel ZnO and ZnO:Al films are smaller than the optical band gap of single crystalline ZnO (3.37 eV).…”

Section: Resultssupporting

confidence: 89%

Optical characterization of sol–gel ZnO:Al thin films

Ivanova

Harizanova

Koutzarova

et al. 2015

Superlattices and Microstructures

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Abstract. This paper presents a sol-gel technological process for preparing thin films of ZnO and ZnO:Al. The effect of annealing treatments (500, 600, 700 and 800 o C) on their properties was studied. The structural evolution with the temperature was investigated by using X-Ray diffraction (XRD). Fourier Transform Infrared (FTIR) and UV-VIS spectrophotometry were applied to characterizing the films' vibrational and optical properties. The ZnO and ZnO:Al films possessed a polycrystalline structure. The films studied are highly transparent in the visible spectral range. The optical band gap values and the haze parameter were also determined.

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Section: Resultssupporting

confidence: 89%

Optical characterization of sol–gel ZnO:Al thin films

Ivanova

Harizanova

Koutzarova

et al. 2015

Superlattices and Microstructures

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“…The excess oxygen is introduced at interstitial positions to maintain charge neutrality. 23 CV of ZAF thin film deposited on corning glass substrate (ZAF/Glass) was carried out in the potential window of -0.3V to 0.8V in PBS solution. ZAF/Glass structure was used as the working electrode.…”

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confidence: 99%

Al and Fe co-doped transparent conducting ZnO thin film for mediator-less biosensing application

Saha

Gupta

2011

AIP Advances

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Highly c-axis oriented Al and Fe co-doped ZnO (ZAF) thin film is prepared by pulsed laser deposition. Fe introduces redox centre along with shallow donor level while Al doping enhances conductivity of ZnO, thus removing the requirement of both mediator and bottom conducting layer in bioelectrode. Model enzyme (glucose oxidase), was immobilized on surface of ZAF matrix. Cyclic voltammetry and photometric assay show that prepared bio-electrode is sensitive to glucose concentration with enhanced response of 0.18 μAmM-1cm-2 and low Km ∼ 2.01 mM. The results illustrate that ZAF is an attractive matrix for realization of miniaturized mediator-less solid state biosensor

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“…Band gap values decrease with increase in film thickness, which can be attributed to increase of particle size [15]. Change in band gap can be explained in terms of Burstein-Moss effect [16]. According to this theory, the donor electrons occupy states at the bottom of conduction band.…”

Section: Optical Studiesmentioning

confidence: 99%

Investigation of physical properties of perovskite PZT thin films as a function of sol temperature

Sreelalitha

Thyagarajan

2016

J Mater Sci: Mater Electron

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PZT [Pb (Zr 0.52 Ti 0.48 )O 3 ] thin films were prepared on quartz substrate by sol gel spin coating technique. The Zr/Ti ratio was kept at 52/48 which is morphotropic phase boundary (MPB). At MPB both tetragonal and rhombohedral phases coexist and greatly influence the physical properties. In this work the PZT thin films were coated with sol kept at room temperature and at 125°C as 3 (SQ1) and 2 (SQ2) layers. The structural, morphological, compositional and optical properties of coated thin films were studied using X-ray diffraction, scanning electron microscopy (SEM) and UV-Visible spectroscopy. The X-ray diffraction patterns reveal perovskite phase formation for both the films annealed to 660°C. The micro structural parameters such as lattice constant, crystallite size, dislocation density and strain were determined. The grain size increases with increase in sol temperature from 24 to 27 nm. The SEM analysis indicates dense structure of films with good adhesion to the substrate. The cross sectional view of the films provides the thickness of films as 760 and 955 nm. The EDAX data gives the composition of the films. Optical spectra indicate that the films have direct band transitions. The band gap values were dependent on crystallite size and strain. As thickness increases the band gap value decreases from 3.73 to 3.26 eV.

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Optical and photoluminescent properties of sol-gel Al-doped ZnO thin films

Cited by 164 publications

References 24 publications

Optical characterization of sol–gel ZnO:Al thin films

Optical characterization of sol–gel ZnO:Al thin films

Al and Fe co-doped transparent conducting ZnO thin film for mediator-less biosensing application

Investigation of physical properties of perovskite PZT thin films as a function of sol temperature

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