Optical and photoelectrical properties of the TlGaS2 ternary compound

Kalkan, N.; Kalomiros, John; Hanias, M. P.; Anagnostopoulos, A. N.

doi:10.1016/0038-1098(96)00294-3

Cited by 38 publications

(20 citation statements)

References 12 publications

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“…The crystals under study have a high photosensitivity, which could be confirmed with aid of the dc-PC spectra at different values of applied voltage and light intensity (see Figs. 4,5), and also could be confirmed with aid of the values of the CLT in Figs. 7, 9 and 11.…”

Section: Resultssupporting

confidence: 63%

Photoconductivity in Tl₄S₃ layered single crystals

Ashraf

Elshaikh

Badr³

2004

Cryst. Res. Technol.

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Photoconductivity measurements are carried out in this work for single crystals of Tl 4 S 3 compound by using both pulsed excitation (a.c) and steady state (a.c) methods in order to elucidate the nature of photoconductivity (PC) in this compound. Results are reported in the temperature range from 77 to 300K, excitation intensity range from 1800 to 3300Lux, applied voltage range from 8 to 14V, and wavelength range from 840 to 1450nm. Both of the ac-photoconductivity (ac-PC) and the spectral distribution of the photocurrent are studied at different values of light intensity, applied voltage and temperature. Dependencies of carrier lifetime on light intensity, applied voltage and temperature are also investigated as results of the ac-PC measurements. By using the results of the dc-photoconductivity (dc-PC) measurements, the temperature dependence of the energy gap width is described.

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Section: Resultssupporting

confidence: 63%

Photoconductivity in Tl₄S₃ layered single crystals

Ashraf

Elshaikh

Badr³

2004

Cryst. Res. Technol.

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“…TlGaS 2 , which is a member of this class of crystals, is a semiconductor with an indirect band gap of about 2.46 eV at room temperature [2]. In view of its possible applications in optoelectronic devices in the visible range, a great deal of attention has been devoted to the study of the structural [3][4][5], electrical [6] and photoelectrical properties [7]. Optical absorption (OA) spectra in the region of fundamental absorption [2,8,9], Raman studies and infrared reflection (IR) spectra [3,10,11] have also been reported.…”

Section: Introductionmentioning

confidence: 99%

Urbach-Martienssen Tails in the Absorption Spectra of Layered Ternary Semiconductor TlGaS2

Abay

Güder

Efeoǧlu

et al. 2001

phys. stat. sol. (b)

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The dependence of the absorption coefficient on the photon energy and sample temperature near the fundamental absorption edge (AE) was investigated for TlGaS 2 layered semiconductor crystals. The exponential absorption tails observed in the 10-340 K temperature range were interpreted as Urbach-Martienssen (U-M) tails. From the analysis of these tails, characteristic Urbach parameters were determined. The results lead to the conclusion that the temperature dependence of the absorption tails near the fundamental AE of TlGaS 2 is the result of thermal disorder.

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“…In view of its possible applications in optoelectronic devices, a great deal attention has been devoted to study the optical and electrical properties of TlGaS 2 [2][3][4][5][6][7]. In this regard, detailed information on the impurity levels is very useful for the fabrication of high-quality devices.…”

Section: Introductionmentioning

confidence: 99%

Infrared photoluminescence from TlGaS₂ layered single crystals

Yuksek

Gasanly²,

Aydınlı

et al. 2004

Cryst. Res. Technol.

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Photolimuniscence (PL) spectra of TlGaS2 layered crystals were studied in the wavelength region 500-1400 nm and in the temperature range 15-115 K. We observed three broad bands centered at 568 nm (A-band), 718 nm (B-band) and 1102 nm (C-band) in the PL spectrum. The observed bands have half-widths of 0.221, 0.258 and 0.067 eV for A-, B-, and C-bands, respectively. The increase of the emission band half-width, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature are explained using the configuration coordinate model. We have also studied the variations of emission band intensity versus excitation laser intensity in the range from 0.4 to 19.5 W cm-2. The proposed energy-level diagram allows us to interpret the recombination processes in TlGaS2 crystals. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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Optical and photoelectrical properties of the TlGaS2 ternary compound

Cited by 38 publications

References 12 publications

Photoconductivity in Tl₄S₃ layered single crystals

Photoconductivity in Tl₄S₃ layered single crystals

Urbach-Martienssen Tails in the Absorption Spectra of Layered Ternary Semiconductor TlGaS2

Infrared photoluminescence from TlGaS₂ layered single crystals

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Optical and photoelectrical properties of the TlGaS2 ternary compound

Cited by 38 publications

References 12 publications

Photoconductivity in Tl4S3 layered single crystals

Photoconductivity in Tl4S3 layered single crystals

Urbach-Martienssen Tails in the Absorption Spectra of Layered Ternary Semiconductor TlGaS2

Infrared photoluminescence from TlGaS2 layered single crystals

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Photoconductivity in Tl₄S₃ layered single crystals

Photoconductivity in Tl₄S₃ layered single crystals

Infrared photoluminescence from TlGaS₂ layered single crystals