Optical and photoelectric properties of Gex(As2Te3)100−x thin films

Elshafie, A.; Mansour, B. A.; Abdel-All, A.

doi:10.1016/s0022-3697(98)00306-0

Cited by 22 publications

(6 citation statements)

References 15 publications

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“…The optical band gap value obtained in this work agrees with the experimental data (2.35 eV) [12] and the theoretical data (2.20 eV) [28]. The spectral dependence of the absorption coefficient, α, near the band edge, at the photon energy below the optical gap follows the Urbach's empirical formula [29]:…”

Section: Optical Characterizationsupporting

confidence: 87%

Effect of gamma irradiation on structural, morphological and optical properties of p-quaterphenyl thin films

Attia¹,

Saadeldin²,

Sawaby³

2018

JAP

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Para-quaterphenyl thin films were deposited onto glass and quartz substrates by thermal evaporation method. p-quaterphenyl thin films wereexposed to gamma radiation of Cobat-60 radioactive source at room temperature with a dose of 50 kGy to study the effect of ?-irradiation onthe structure and the surface morphology as well as the optical properties of the prepared films. The crystalline structure and the surface morphology of the as-deposited and ?-irradiated films were examined using the X-ray diffraction and the field emission scanning electron microscope. The optical constants (n & k) of the as-deposited and ?-irradiated films were obtained using the transmittance and reflectance measurements, in the wavelength range starting from 250 up to 2500 nm. The analysis of the absorption coefficient data revealed an allowed direct transition with optical band gap of 2.2 eV for the as-deposited films, which decreased to 2.06 eV after exposing film to gamma irradiation. It was observed that the Urbach energy values change inversely with the values of the optical band gap. The dispersion of the refractive index was interpreted using the single oscillator model. The nonlinear absorption coefficient spectra for the as-deposited and ?-irradiated p-quaterphenyl thin films were obtained using the linear refractive index.

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Section: Optical Characterizationsupporting

confidence: 87%

Effect of gamma irradiation on structural, morphological and optical properties of p-quaterphenyl thin films

Attia¹,

Saadeldin²,

Sawaby³

2018

JAP

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show abstract

“…The spectral dependence of the absorption coefficient (α) and photon energy (hν) near the band edge obey the Urbach's empirical formula [38].…”

Section: Optical Propertiesmentioning

confidence: 99%

Optical and electrical properties of In4Se96-xSx chalcogenide thin films

Ganaie

Zulfequar

2016

Journal of Alloys and Compounds

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“…The absorption coefficient near the band edge depends exponentially on the photon energy and hence obeys the Urbach's empirical formula [43]. …”

Section: Effect Of γ-Irradiation On the Optical Band Gap (E G ) And Umentioning

confidence: 99%

Effect of⁶⁰Co γ-irradiation on structural and optical properties of thin films of Ga₁₀Se₈₀Hg₁₀

Ahmad

Asokan

Khan

et al. 2015

Philosophical Magazine

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Thin films of Ga 10 Se 80 Hg 10 have been deposited onto a chemically cleaned Al 2 O 3 substrates by thermal evaporation technique under vacuum. The investigated thin films are irradiated by 60 Co γ-rays in the dose range of 50-150 kGy. X-ray diffraction patterns of the investigated thin films confirm the preferred crystallite growth occurs in the tetragonal phase structure. It also shows, the average crystallite size increases after γ-exposure, which indicates the crystallinity of the material increases after γ-irradiation. These results were further supported by surface morphological analysis carried out by scanning electron microscope and atomic force microscope which also shows the crystallinity of the material increases with increasing the γ-irradiation dose. The optical transmission spectra of the thin films at normal incidence were investigated in the spectral range from 190 to 1100 nm. Using the transmission spectra, the optical constants like refractive index (n) and extinction coefficient (k) were calculated based on Swanepoel's method. The optical band gap (E g ) was also estimated using Tauc's extrapolation procedure. The optical analysis shows: the value of optical band gap of investigated thin films decreases and the corresponding absorption coefficient increases continuously with increasing dose of γ-irradiation.

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Optical and photoelectric properties of Gex(As2Te3)100−x thin films

Cited by 22 publications

References 15 publications

Effect of gamma irradiation on structural, morphological and optical properties of p-quaterphenyl thin films

Effect of gamma irradiation on structural, morphological and optical properties of p-quaterphenyl thin films

Optical and electrical properties of In4Se96-xSx chalcogenide thin films

Effect of⁶⁰Co γ-irradiation on structural and optical properties of thin films of Ga₁₀Se₈₀Hg₁₀

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Optical and photoelectric properties of Gex(As2Te3)100−x thin films

Cited by 22 publications

References 15 publications

Effect of gamma irradiation on structural, morphological and optical properties of p-quaterphenyl thin films

Effect of gamma irradiation on structural, morphological and optical properties of p-quaterphenyl thin films

Optical and electrical properties of In4Se96-xSx chalcogenide thin films

Effect of60Co γ-irradiation on structural and optical properties of thin films of Ga10Se80Hg10

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Effect of⁶⁰Co γ-irradiation on structural and optical properties of thin films of Ga₁₀Se₈₀Hg₁₀