Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor

Yang, Chen-Chuan; Tung, Wan-Ju; Chang, Shoou Jinn; Hsu, Ming-Hung; Wei, Huang; Li, Cheng-Hsun; Fang, Yu-Jui

doi:10.1109/isne.2018.8394646

Cited by 2 publications

(1 citation statement)

References 2 publications

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“…To overcome these issues, a few studies have recently been conducted on phototransistors composed only of oxide semiconductors. 18,19 However, electrical characteristics of these phototransistors are degraded in the dark because the channel layer is identical to the light absorption layer.…”

Section: Introductionmentioning

confidence: 88%

Artificially Fabricated Subgap States for Visible-Light Absorption in Indium–Gallium–Zinc Oxide Phototransistor with Solution-Processed Oxide Absorption Layer

Chung

Tak

Kim

et al. 2019

ACS Appl. Mater. Interfaces

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We present a solution-processed oxide absorption layer (SAL) for detecting visible light of long wavelengths (635 and 532 nm) for indium–gallium–zinc oxide (IGZO) phototransistors. The SALs were deposited onto sputtered IGZO using precursor solutions composed of IGZO, which have the same atomic configuration as that of the channel layer, resulting in superior interface characteristics. We artificially generated subgap states in the SAL using a low annealing temperature (200 °C), minimizing the degradation of the electrical characteristics of thin-film transistor. These subgap states improved the photoelectron generation in SALs under visible light of long wavelength despite the wide band gap of IGZO (∼3.7 eV). As a result, IGZO phototransistors with SALs have both high optical transparency and superior optoelectronic characteristics such as a high photoresponsivity of 206 A/W and photosensitivity of ∼106 under the influence of a green (532 nm) laser. Furthermore, endurance tests proved that the IGZO phototransistor with SALs can operate stably under red laser illumination switched on and off at 0.05 Hz for 7200 s.

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Section: Introductionmentioning

confidence: 88%