Optical and magneto-optical spectroscopy of thin ferromagnetic InMnAs layers

Ганьшина, Е. А.; Golik, L. L.; Kovalev, V. F.; Kun’kova, Z. E.; Звонков, Б. Н.; Vinogradov, A. N.

doi:10.1134/s102745100904003x

Cited by 2 publications

(5 citation statements)

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“…The TKE spectra for sample #5 (Y Mn = 0.26) display similar behaviour, as is evident from figure 5. The peak with E max ≈ 1.75 eV and the wide band in the region E > 2.5 eV, which were observed in [16], are well defined in the spectra. At the same time the δ(E) dependences for this sample are different from the spectra reported in [16] by the presence of the band with E max ≈ 0.85 eV.…”

Section: Transversal Kerr Effectmentioning

confidence: 54%

“…The peak with E max ≈ 1.75 eV and the wide band in the region E > 2.5 eV, which were observed in [16], are well defined in the spectra. At the same time the δ(E) dependences for this sample are different from the spectra reported in [16] by the presence of the band with E max ≈ 0.85 eV. In samples #4-#1, as the Y Mn value decreases, the TKE magnitude appreciably decreases in the region E > 2.2 eV and the pronounced TKE band consisting of one positive and one negative component appears in the range 0.5-2.2 eV.…”

Section: Transversal Kerr Effectmentioning

confidence: 54%

“…In our previous study [16] these features were observed in the TKE spectra of the InMnAs layers fabricated at T g = 280-320 • C, Y Mn = 0.25 and 0.33. It was evidence for the presence of the MnAs inclusions in the layers.…”

Section: Transversal Kerr Effectmentioning

confidence: 69%

“…This paper presents the results of a study of the evolution of the transversal Kerr effect and permittivity spectra for InMnAs layers, grown by the laser ablation technique at lower Y Mn values than in [16]. A resonant enhancement of the transversal Kerr effect was observed in some InMnAs layers.…”

Section: Introductionmentioning

confidence: 96%

“…One can expect that MO study of the InMnAs layers will allow us to reveal the specific features, which are due to the presence of MnAs inclusions and Mn ions in different site positions, as well as to a change of the electronic structure with Mn doping. In [16] we have explored the InMnAs layers grown by laser ablation at T g = 280-320 • C, Y Mn = 0.25 and 0.33 using magneto-optical (the transversal Kerr effect) and optical (spectral ellipsometry) techniques. Several bands caused by electronic transitions in the MnAs inclusions have been detected in the TKE spectra of these layers.…”

Section: Introductionmentioning

confidence: 99%

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Resonant enhancement of the transversal Kerr effect in the InMnAs layers

Ганьшина

Golik

Kovalev

et al. 2010

J. Phys.: Condens. Matter

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Spectral dependences of the transversal Kerr effect (TKE) as well as of the real and imaginary parts of the permittivity of InMnAs layers were studied. Pulsed laser ablation of Mn and InAs targets was used to form the layers on GaAs(100) substrates. Spectra of the optical constants and TKE depended substantially on layer fabrication conditions and testified to the presence of MnAs inclusions in the samples. The cross-sectional transmission electron microscopy revealed the presence of inclusions of size 10-40 nm in the layers. At room temperature a strong resonant band was observed in the TKE spectra of the InMnAs layers in the energy range of 0.5-2.2 eV. In this band the TKE was comparable in magnitude but opposite in sign to that in the strong ferromagnetic MnAs. The resonant character of the TKE spectra was explained by excitation of surface plasmons in the MnAs nanoclusters embedded in the InMnAs semiconductor host. Modelling the TKE spectra for (InAs)(1 - X):(MnAs)(X) nanocomposites in the effective-medium approximation (Maxwell-Garnett approximation) confirmed the assumption on the plasmon mechanism of the resonant enhancement of the transversal Kerr effect in the InMnAs layers.

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Section: Transversal Kerr Effectmentioning

confidence: 54%

Section: Transversal Kerr Effectmentioning

confidence: 54%

Section: Transversal Kerr Effectmentioning

confidence: 69%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations