Optical and electronic properties of single modulation doped GaAs/AlGaAs V-grooved quantum wire modified by ion implantation

Huang, Shaohua; Chen, Zhanghai; Bai, Lihui; Wang, Fangzhen; Shen, Xuechu

doi:10.1360/04yw0199

Cited by 2 publications

(2 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Within the last decade, from V-grooved (001) GaAs substrates, it has been possible to grow high-quality site-controlled InGaAsN VGQWs via modulated-flux metal-organic vapor phase epitaxy [11], or low-pressure metal-organic chemical vapor deposition [12,13]. The broad set of technological applications for nano-electronics based in VGQWs structures, ranging from VGQW lasers [8,14,15], pMOSFETs [16], 1.3 µm wavelength emitters [11], to VGQW AlGaAs/GaAs multilayers for complex optical devices [17], is still stimulating theoretical [18][19][20] and experimental [20,21] investigations.…”

Section: Introductionmentioning

confidence: 99%

“…These data are relevant since the systematical variation of the crescent's thickness, size and position of the pinch-offs, intersidewall angles, quantum well widths, and VGQW array's pitch can lead to fashionable tailoring of the electronic states [10], optical properties [10,21], quantum magnetotransport [26], and carrier transfer phenomena [27]. In this regard, these findings have stimulated several theoretical explorations related to electron [28,29], hole [29] and impurity [30,31] states calculations in single VGQWs by using an effective potential scheme.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Spectral features and optical absorption of vertically stacked V-groove quantum wires

et al. 2022

View full text Add to dashboard Cite

The spectral features and the linear, nonlinear, and total optical absorption coefficients of two realistic $$\mathrm {GaAs/Ga}_{1-x}{\mathrm{Al}}_x{\mathrm{As}}$$ GaAs / Ga 1 - x Al x As vertically stacked V-groove quantum wires confining electronic states were theoretically studied. The compact density matrix formalism and the finite element method were used as solution frameworks. The influence of the barrier width, inter-sidewall angle, the crescent thickness of the stack, and the influence of a static electric field on the energy spectrum and the optical coefficients is addressed. Increasing the crescent thickness (inter-sidewall angle) leads to a reduction (non-monotonous increase) of the energy values, while the presence of a static electric field leads to controllable stark-like patterns. In all cases, anti-crossing points are reported. By increasing the crescent thickness, inter-sidewall angle, or barrier width, a non-monotonous blue-/red-shift of the resonant peaks of the optical absorption is observed. In addition, the results in asymmetric/symmetric vertically coupled V-groove quantum wire systems suggest that the quantum tunneling phenomenon can be linked to the enhancement of the total optical absorption due to the possibility of the generation of dipole moments by higher electron mobility. Thus, optical fields oriented along the growth direction enhance the optical absorption. Furthermore, the absorption coefficient maximum is drastically modified by varying the inter-sidewall angle, and even the evolution tendency can be inverted due to the anti-crossing points in the energy spectra. Since the obtained resonant peaks are located below 20 meV in the spectra, the analyzed system could be interesting for exploring and designing new Terahertz devices.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Spectral features and optical absorption of vertically stacked V-groove quantum wires

et al. 2022

View full text Add to dashboard Cite

show abstract

Impurity-related linear and nonlinear optical response in quantum-well wires with triangular cross section

Duque

Mora-Ramos

Kasapoğlu

et al. 2013

Journal of Luminescence

View full text Add to dashboard Cite

The 1s-like and 2p-like donor impurity energy states are studied in a semiconductor quantum wire of equilateral triangular cross section as functions of the impurity position and the geometrical size of the structure. Linear and nonlinear coefficients for the optical absorption and relative refractive index change associated with 1s-2p transitions are calculated for both the x-polarization and y-polarization of the incident light. The results show a mixed effect of redshift and blueshift depending on the location of the donor atom. Also, strong nonlinear contributions to the optical absorption coefficient are obtained for both polarizations in the on-center impurity case.

show abstract

Optical and electronic properties of single modulation doped GaAs/AlGaAs V-grooved quantum wire modified by ion implantation

Cited by 2 publications

References 16 publications

Spectral features and optical absorption of vertically stacked V-groove quantum wires

Spectral features and optical absorption of vertically stacked V-groove quantum wires

Impurity-related linear and nonlinear optical response in quantum-well wires with triangular cross section

Contact Info

Product

Resources

About