Optical and Electronic Characteristics of Germanium Quantum Dots Formed by Selective Oxidation of SiGe/Si-on-Insulator

Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO2

“…In addition, the lower ε values of Fig. 3 for thinner films are genuine because TEM shows no reduction in film thickness upon annealing and are likely due to smaller nanocrystal size [12].…”

“…1. At first sight, the largest difference is a reduced intensity of the E 1 transitions, which is correlated to the nanocrystalline structure of the Ge layer [11][12][13][14]. To determine the volume fractions of crystallized and amorphous Ge in every sample it is necessary to use as input the characteristic ε of the components.…”

Dielectric engineering of Ge nanocrystal/SiO2 nanocomposite thin films with Ge ion implantation: Modeling and measurement

“…Therefore, an approach to obtain as well as to modulate the dielectric properties of nc-Ge/SiO 2 thin films is essential for modeling and design of the electronic and optoelectronic devices based on such a nanocomposite material. In the literature, most of researchers reported optical approach (e.g., spectroscopic ellipsometry) to extract the dielectric properties of semiconductor nanocrystals alone, or simply presented capacitance-voltage (C-V) data of nanocrystal-embedded films without sophisticated modeling considering the nanocrystal distribution [13][14][15][16]. There are still lack of systematic works on the dielectric properties of composite film systems with nanocrystals distributed in dielectric matrices.…”

Metal-insulator-metal photodetectors with Ge quantum dots formed by selective oxidation of single crystalline-Si>inf<0.85>/inf<Ge>inf<0.15>/inf</Si-on-insulator

“…The Ge dot size and spatial density could be modulated by Ge mole fraction of Si-x(Gex, and conditions of thermal oxidation [5,6]. Fig.…”

“…Among these fabrications, a PD with Ge quantum dots (QDs) are attractive due to its low dark current, high operation temperature, allowing the absorption of light of any polarization, and normal incident detection due to the confinement of charges in all lhree spatial dimensions. In addition, Ge QDs are reported to exhibit quasi-direct band-gap optical properties and emit blue to ultraviolet photoluminescence as their sizes are smaller than 10 nm due to conspicuous quantum confinement effect [4][5][6]. Consequently, Ge QDs are expected to provide a great potential for optoelectronic applications.…”