Optical and electro-optical properties of submicrometer lithium niobate slab waveguides prepared by crystal ion slicing and wafer bonding

Rabiei, Payam; Günter, Peter

doi:10.1063/1.1819527

Cited by 199 publications

(97 citation statements)

References 7 publications

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“…19 30 , we calculated an effective value r eff ¼ 148 pm V À 1 by neglecting the tensor nature of r and simply considering the field-induced phase shift between two orthogonal components of the transmitted light, as described in the Methods section. Our results represent a major improvement compared with the limited number of published data on EO properties of lead-free oxides integrated on silicon [31][32][33] .…”

Section: Discussionmentioning

confidence: 64%

A strong electro-optically active lead-free ferroelectric integrated on silicon

et al. 2013

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The development of silicon photonics could greatly benefit from the linear electro-optical properties, absent in bulk silicon, of ferroelectric oxides, as a novel way to seamlessly connect the electrical and optical domain. Of all oxides, barium titanate exhibits one of the largest linear electro-optical coefficients, which has however not yet been explored for thin films on silicon. Here we report on the electro-optical properties of thin barium titanate films epitaxially grown on silicon substrates. We extract a large effective Pockels coefficient of r eff ¼ 148 pm V À 1 , which is five times larger than in the current standard material for electrooptical devices, lithium niobate. We also reveal the tensor nature of the electro-optical properties, as necessary for properly designing future devices, and furthermore unambiguously demonstrate the presence of ferroelectricity. The integration of electro-optical active films on silicon could pave the way towards power-efficient, ultra-compact integrated devices, such as modulators, tuning elements and bistable switches.

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Section: Discussionmentioning

confidence: 64%

A strong electro-optically active lead-free ferroelectric integrated on silicon

et al. 2013

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“…However, realization of such predictions has proven challenging owing mainly to difficulties in fabrication. Principally, these difficulties relate to the bonding of piezoelectric materials which, when joined using conventional electrothermal routes, produce tremendous interfacial stresses 19,20 -an issue reflected in the fact that nearly all SAW micropumps that have been developed to date are employ open channels or planar, chemically treated, surfaces. [21][22][23] Alternative techniques such as surface activated bonding using an argon beam, 24 for example, have somewhat addressed this issue by allowing room temperature processing, but, such methods require sample manipulation within high-vacuum environments and a notably atypical vacuum chamber configuration (for example, the MWB-04 by Sojitsu Manufacturing/ Mitsubishi Heavy Industries, Tokyo, Japan), making this route both impractical and prohibitively expensive.…”

mentioning

confidence: 99%

UV epoxy bonding for enhanced SAW transmission and microscale acoustofluidic integration

2012

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Surface acoustic waves (SAWs) are appealing as a means to manipulate fluids within lab-on-a-chip systems. However, current acoustofluidic devices almost universally rely on elastomeric materials, especially PDMS, that are inherently ill-suited for conveyance of elastic energy due to their strong attenuation properties. Here, we explore the use of a low-viscosity UV epoxy resin for room temperature bonding of lithium niobate (LiNbO 3 ), the most widely used anisotropic piezoelectric substrate used in the generation of SAWs, to standard micromachined superstrates such as Pyrex1 and silicon. The bonding methodology is straightforward and allows for reliable production of submicron bonds that are capable of enduring the high surface strains and accelerations needed for conveyance of SAWs. Devices prepared with this approach display as much as two orders of magnitude, or 20 dB, improvement in SAW transmission compared to those fabricated using the standard PDMS elastomer. This enhancement enables a broad range of applications in acoustofluidics that are consistent with the low power requirements of portable battery-driven circuits and the development of genuinely portable lab-on-a-chip devices. The method is exemplified in the fabrication of a closed-loop bidirectional SAW pumping concept with applications in micro-scale flow control, and represents the first demonstration of closed channel SAW pumping in a bonded glass/LiNbO 3 device.Chip-based fluidic actuators using surface acoustic waves (SAWs) have become popular among microfluidic practitioners, who continue to explore new applications in acoustofluidic integration.

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“…A combination of deep helium ion implantation, selective etching and epoxy-resin bonding has been applied to transfer 5-to-10-μm-thick LiNbO 3 layers to silicon substrates [162]. LiNbO 3 -on-LiNbO 3 thin films and modulators, buffered by a SiO 2 layer, attained by ion implantation and wafer bonding have been also reported [163,164]. Interestingly, the EO properties of the films was not degraded during the implantation process.…”

Section: Second-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

“…Alternatively, crystal ion slicing has been successfully employed to obtain high-quality thin films of crystalline LiNbO 3 [162][163][164][165]. A combination of deep helium ion implantation, selective etching and epoxy-resin bonding has been applied to transfer 5-to-10-μm-thick LiNbO 3 layers to silicon substrates [162].…”

Section: Second-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

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Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the freecarrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

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Optical and electro-optical properties of submicrometer lithium niobate slab waveguides prepared by crystal ion slicing and wafer bonding

Cited by 199 publications

References 7 publications

A strong electro-optically active lead-free ferroelectric integrated on silicon

A strong electro-optically active lead-free ferroelectric integrated on silicon

UV epoxy bonding for enhanced SAW transmission and microscale acoustofluidic integration

Emerging heterogeneous integrated photonic platforms on silicon

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