Optical and electrical properties of ZnO films prepared by URT-IP method

Shirakata, Sho; Sakemi, Toshiyuki; Awai, K.; Yamamoto, Tetsuya

doi:10.1016/s0040-6090(03)01161-1

Cited by 45 publications

(32 citation statements)

References 13 publications

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“…, with increasing the oxygen gas flow rate from 30 to 20 sccm. These results may be related with oxygen vacancies [10]. Figure 1 shows the optical transmission and reflectance spectra of undoped ZnO films as a function of carrier concentration.…”

Section: Methodsmentioning

confidence: 91%

Photoconductivity of Ga doped polycrystalline ZnO films grown by reactive plasma deposition

Kishimoto

Hayashi

Hamaguchi³

et al. 2007

Physica Status Solidi (b)

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Photoconductivity and photo-absorption of polycrystalline Ga-doped ZnO (GZO) thin films with film thickness of 200 nm have evaluated compared with undoped ZnO films. The GZO and undoped ZnO thin films were deposited on alkali-free glass substrate at 200 °C by a reactive plasma deposition with DC arc discharge technique under an oxygen gas flow rate from 0 to 30 sccm. Undoped ZnO films with carrier concentration of 2.50 × 10 18 and 7.96 × 10 18 cm -3 have exciton absorption at about 3.28 eV. For these films, the photoconductivity peak is agreement with the photon-energy of exciton absorption in the optical-absorption. The optical band edge of undoped ZnO films estimated from the optical-absorption shows a shift to higher energy with increasing the carrier concentration. The increase of oxygen gas flow rate led to the resistivity change of GZO films from 2.15 × 10 -4 to 4.54 × 10 -3 Ω cm, corresponding to the carrier concentration change from 1.39 × 10 21 to 1.05 × 10 20 cm -3 . The photoconductivity of GZO film is larger than that of undoped ZnO film. The peak energy of photoconductivity spectra of GZO films are seen to little shift to higher energy with increasing the carrier concentration. The GZO film exhibited the larger photoconductivity at the wavelength, ranging widely less than 380 nm. GZO film with carrier concentration more than 1 × 10 21 cm -3 indicated much larger photoconductivity.

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Section: Methodsmentioning

confidence: 91%

Photoconductivity of Ga doped polycrystalline ZnO films grown by reactive plasma deposition

Kishimoto

Hayashi

Hamaguchi³

et al. 2007

Physica Status Solidi (b)

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“…In the ZnO thin films, oxygen atoms adsorbed by the surface of crystallites trap electrons and decrease the carrier concentration and also decrease the carrier mobility by increasing the potential height at the surface of crystallites [17]. On the other hand, as mentioned above, the decrease in grain size increases the effective surface area and then causes the increase in the number of adsorption site for oxygen [18]. Therefore, we may conclude that the increase of the resistivity of ZnO thin films with increasing the gas flow ratio and the annealing temperature is due to the decrease in carrier concentration and carrier mobility caused by the decrease in grain size.…”

Section: The Structure and Electrical Propertiesmentioning

confidence: 97%

Optical and electrical properties of ZnO doped with nitrogen

Kang

Shin

Prabakar

et al. 2004

Physica Status Solidi (b)

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Ultraviolet (UV) and visible photoluminescence (PL) has been achieved at room temperature from ZnO films deposited on the sapphire substrate by RF-magnetron sputtering. The electrical and optical properties of as-deposited and annealed films were investigated as a function of N 2 O/Ar gas flow ratio. All the ZnO films deposited by sputtering show a typical hexagonal wurtzite crystallographic orientation with a c-axis perpendicular to the substrate surface. The growth rate decreases with the increase of the gas flow ratio. The high carrier mobility and low resistivity films were prepared at a N 2 O/Ar gas flow ratio of 0.33. The most intense UV and week blue luminescence was observed for the as-deposited films. A strong blue luminescence emission due to oxygen vacancies was obtained from the films annealed at 1000 °C.

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“…We have previously reported transparent low-resistance Ga-doped ZnO (GZO) films produced using ion plating (Shirakata et al, 2003;Yamada et al, 2007aYamada et al, , b, 2010. In the present study, we carried out an evaluation of the sensitivity of these polycrystalline ZnO thin films to CO gas.…”

Section: Introductionmentioning

confidence: 99%

Carbon monoxide gas sensing properties of Ga-doped ZnO film grown by ion plating with DC arc discharge

Kishimoto

Akamatsu

Song

et al. 2014

J. Sens. Sens. Syst.

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Abstract. The carbon monoxide (CO) gas sensing properties of low-resistance heavily Ga-doped ZnO thin films were evaluated. The ZnO films with a thickness of 50 nm were deposited at 200 • C by ion plating. The electrical properties of the ZnO films were controlled by varying the oxygen assist gas flow rate during deposition. The CO gas sensitivity of ZnO films with Au electrodes was investigated in nitrogen gas at a temperature of 230 to 330 • C. CO gas concentration was varied in the range of 0.6-2.4 % in nitrogen gas. Upon exposure to CO gas, the current flowing through the film was found to decrease. This response occurred even at the lowest temperature of 230 • C, and is thought to be the result of a mechanism different than the previously reported chemical reaction.

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Optical and electrical properties of ZnO films prepared by URT-IP method

Cited by 45 publications

References 13 publications

Photoconductivity of Ga doped polycrystalline ZnO films grown by reactive plasma deposition

Photoconductivity of Ga doped polycrystalline ZnO films grown by reactive plasma deposition

Optical and electrical properties of ZnO doped with nitrogen

Carbon monoxide gas sensing properties of Ga-doped ZnO film grown by ion plating with DC arc discharge

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