Optical and Electrical Properties of Sn-Doped Zinc Oxide Single Crystals

Haseman, Micah; Saadatkia, Pooneh; Warfield, Jack T.; Lawrence, John V.; Hernandez, Armando; Jellison, G. E.; Boatner, L. A.; Selim, F. A.

doi:10.1007/s11664-017-5942-6

Cited by 8 publications

(4 citation statements)

References 33 publications

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“…No secondary Al-, Sn-Zn-based, or other impurity phases could be observed indicating that the Al and Sn atoms substitute Zn atoms without a change in the crystal structure of ZnO. This observation agrees with other previously published works where the hexagonal Wurtzite lattice of ZnO was stable and didn't change with dopants as long as the dopant concentration was below the solubility limit in the ZnO matrix [14,19,20]. Also, ionic radii of Sn +4 (~69 pm) and Al +3 (~50 pm) are lower than that of Zn +2 (~74 pm) which makes the substation process likely to occur [21,22].…”

Section: Structural Analysissupporting

confidence: 91%

The Effect of Al and Sn Doping on the Optical and Electrical Properties of ZnO Nanostructures

Ahmed,

Hasaneen,

Mohamed

et al. 2024

Sohag Journal of Sciences

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This work presents a comparison between the impact of Al and Sn doping on the structural, electrical, and optical properties of ZnO nanostructures (NSs). The samples have been synthesized using the well-known chemical vapor deposition at optimized conditions of temperature and ambient gas. The formation of the hexagonal Wurtzite structure of the ZnO has been confirmed using the x-ray diffraction technique. The impact of doping by Al and Sn on the morphology and particle shapes of ZnO has been explored using a field emission scanning electron microscope. The Kubelka-Munk's and Tauc's equations have been used for studying the optical properties while the Burstein Moss shift effect has been employed to explain the increase in the optical energy gap upon doping. The undoped and doped nanostructures show typical semiconductor features and the electrical conduction mechanisms have been described using Arrhenius's model.

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Section: Structural Analysissupporting

confidence: 91%

The Effect of Al and Sn Doping on the Optical and Electrical Properties of ZnO Nanostructures

Ahmed,

Hasaneen,

Mohamed

et al. 2024

Sohag Journal of Sciences

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“…[35,36] TL or TSL has been widely applied for measuring deep and relatively shallow traps in optical and photonic materials [37,38] and has been quite useful for optical studies of single crystals, films, phosphors, and transparent ceramics for lasers, scintillators, and solid-state lighting applications and more. [9,[39][40][41][42][43][44][45][46][47][48][49][50][51][52][53] However, its applications in semiconductors has not been realized until recently [5,8,54] and are still very limited. The goal of this article is to explain the basics of TL, inform the reader about its capability as a great tool for measuring the energy levels of donors and acceptors in semiconductors, and bring the attention to the development of cryogenic thermally stimulated photoemission spectroscopy (C-TSPS) [55] which extends TL or thermally stimulated emission measurements to cover the entire range of shallow and deep levels in bandgap materials.…”

Section: Introductionmentioning

confidence: 99%

Advanced Thermoluminescence Spectroscopy as a Research Tool for Semiconductor and Photonic Materials: A Review and Perspective

Selim

2023

Physica Status Solidi (a)

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Thermoluminescence (TL) or thermally stimulated luminescence (TSL) spectroscopy is based on liberating charge carriers from traps in the bandgap by providing enough thermal energy to overcome the potential barrier of the traps. It provides a powerful tool to measure the positions of the localized states/traps in the bandgap. Despite that, its applications in semiconductors are very limited. Herein, the basics of TL spectroscopy and the recent advances in the technique with focus on cryogenic thermally stimulated photoemission spectroscopy (C‐TSPS) which extends TL measurements to cryogenic regime and allows the detection of very low concentrations of shallow and deep localized states is discussed. One goal herein is to introduce the reader to the use of TL and C‐TSPS in the characterization of semiconductors, explaining how it can be applied and demonstrating its advantages as a powerful tool for measuring shallow donor/acceptor ionization energies in semiconductors and as a method for characterizing compensating defects. The article also discusses interesting potential applications of C‐TSPS in new research areas such as corrosion and formation of oxide layers on metal surfaces.

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“…It increases the porosity and surface area of ZnO films [19,20] giving Sndoped ZnO films excellent sensing characteristics [21][22][23][24]. Doping with SnO 2 improves optical properties [25][26][27][28][29], modifies ZnO band gap [30][31][32], enhances the transmittance from visible light to near-IR range [33][34][35][36], enhances electrical conductivity [37,38] and the transport properties through lower resistivity and higher donor concentration [39]. Sn-doped ZnO films found diverse applications in dye sensitized solar cells [40][41][42][43], photocatalysis [44][45][46], piezoelectric devices [47] and even thermoelectrics [48].…”

Section: Introductionmentioning

confidence: 99%

TEM and DFT study of basal-plane inversion boundaries in SnO2-doped ZnO

et al. 2021

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In our recent study (Ribic et al. 2020) we reported the structure of inversion boundaries (IBs) in Sb2O3-doped ZnO. Here, we focus on IBs that form in SnO2-doped ZnO. Using atomic resolution scanning transmission electron microscopy (STEM) methods we confirm that in SnO2-doped ZnO the IBs form in head-to-head configuration, where ZnO4 tetrahedra in both ZnO domains point towards the IB plane composed of a close-packed layer of octahedrally coordinated Sn and Zn atoms. The in-plane composition is driven by the local charge balance, following Pauling's principle of electroneutrality for ionic crystals, according to which the average oxidation state of cations is 3+. To satisfy this condition, the cation ratio in the IB-layer is Sn4+: Zn2+=1:1. This was confirmed by concentric electron probe analysis employing energy dispersive spectroscopy (EDS) showing that Sn atoms occupy 0.504 ? 0.039 of the IB layer, while the rest of the octahedral sites are occupied by Zn. IBs in SnO2-doped ZnO occur in the lowest energy, IB3 translation state with the cation sublattice expansion of ?IB(Zn-Zn) of +91 pm with corresponding O-sublattice contraction ?IB(O-O) of -46 pm. Based on quantitative HRTEM and HAADF-STEM analysis of in-plane ordering of Sn and Zn atoms, we identified two types of short-range distributions, (i) zigzag and (ii) stripe. Our density functional theory (DFT) calculations showed that the energy difference between the two arrangements is small (~6 meV) giving rise to their alternation within the octahedral IB layer. As a result, cation ordering intermittently changes its type and the direction to maximize intrinsic entropy of the IB layer driven by the in-plane electroneutrality and 6-fold symmetry restrictions. A long-range in-plane disorder, as shown by our work would enhance quantum well effect to phonon scattering, while Zn2+ located in the IB octahedral sites, would modify the bandgap, and enhance the in-plane conductivity and concentration of carriers. Keywords

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Optical and Electrical Properties of Sn-Doped Zinc Oxide Single Crystals

Cited by 8 publications

References 33 publications

The Effect of Al and Sn Doping on the Optical and Electrical Properties of ZnO Nanostructures

The Effect of Al and Sn Doping on the Optical and Electrical Properties of ZnO Nanostructures

Advanced Thermoluminescence Spectroscopy as a Research Tool for Semiconductor and Photonic Materials: A Review and Perspective

TEM and DFT study of basal-plane inversion boundaries in SnO2-doped ZnO

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