2009
DOI: 10.2109/jcersj2.117.1263
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Optical and electrical properties of aluminum doped zinc oxide thin films at various doping concentrations

Abstract: Aluminum (Al) doped zinc oxide (ZnO) thin films have been prepared using sol-gel spin-coating method at various doping concentrations. The thin films were characterized using UV-Vis-NIR spectrophotometer and current-voltage (I-V) measurement system for optical and electrical properties respectively. The results show all films exhibit low absorbance in visible and near infrared (NIR) region. The calculated Urbach energy indicated the defects in the thin films increase with doping concentrations. The electrical … Show more

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Cited by 31 publications
(10 citation statements)
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“…Similar results are obtained by Mamat et al (2009) for Al-doped ZnO films. For doped films, the values of energy bandgap and Urbach energy are larger than those obtained for non-doped films.…”
Section: Optical Propertiessupporting
confidence: 89%
“…Similar results are obtained by Mamat et al (2009) for Al-doped ZnO films. For doped films, the values of energy bandgap and Urbach energy are larger than those obtained for non-doped films.…”
Section: Optical Propertiessupporting
confidence: 89%
“…The crystallinity of this sample is also reduced, characterized by the broadening and intensity decrease in the XRD peak. In literature, broader and less intense ZnO diffraction peaks with the doping of Al was reported [40,41]. However, ZnO samples doped with Al change in crystallinity could be detected (Fig.…”
Section: Resultsmentioning
confidence: 79%
“…In addition, the values of E0 in Fig. 1(b) show that films synthesized with high values of WTarget and PProcess have more structural disorder [17]. Moreover, it is obvious that long l1 and l2 in Fig.…”
Section: Parallel Coordinatesmentioning
confidence: 92%