2000
DOI: 10.1016/s0040-6090(00)01369-9
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Optical and electrical properties of transparent conductive ITO thin films deposited by sol–gel process

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Cited by 299 publications
(148 citation statements)
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“…The ITO films reported herein exhibit resistivity value of 10.540 9 10 -3 , 8.323 9 10 -3 and 7.957 9 10 -3 X cm at the deposition temperature of 400, 450, and 500°C, respectively, compared to highly resistive bare PI substrate. Higher deposition temperature influences the film micro-structure and surface roughness as also revealed through AFM, leading to the decrease in surface resistivity [37,38]. The obtained resistivity values of the ITO films are found to be slightly higher than the values obtained by Hao et al [39] for ITO/PET system.…”
Section: Electrical Propertiesmentioning
confidence: 72%
“…The ITO films reported herein exhibit resistivity value of 10.540 9 10 -3 , 8.323 9 10 -3 and 7.957 9 10 -3 X cm at the deposition temperature of 400, 450, and 500°C, respectively, compared to highly resistive bare PI substrate. Higher deposition temperature influences the film micro-structure and surface roughness as also revealed through AFM, leading to the decrease in surface resistivity [37,38]. The obtained resistivity values of the ITO films are found to be slightly higher than the values obtained by Hao et al [39] for ITO/PET system.…”
Section: Electrical Propertiesmentioning
confidence: 72%
“…The observed values reveal that the valence states of In and Sn in the sample are mainly +3 and +4, respectively, which are consistent with the previous results. 6,15,28,29 Compared with the precursor, no noticeable change of the XPS signal was observed, except for the slight shift of the In 3d signal due to the microstructural change. However, differences were observed in the O 1s core level XPS spectra after thermal annealing.…”
Section: C·minmentioning
confidence: 97%
“…Hydrous Tin IV chloride (SnCl 4 ) was dissolved in ethanol and this solution was mixed with the refluxed solution at room temperature to obtain the sol-gel solutions, just as reported in Ref [4]. The solution was placed on the room temperature for two days.…”
Section: Sol-gel Ito Thin Films Preparationmentioning
confidence: 99%
“…ITO is easily stabilized at a high temperature and very elastic in a normal environmental condition. The exploration of sol-gel techniques is due to the advantages of sol-gel processing with respect to other routes, including the low processing temperatures, the possibility of chemically tailoring the starting solutions, resulting in new compositions and in better control of the final microstructure, and the easy deposition of thin films [1,[4][5][6][7][8]. A combination of ITO and the quartz crystal is expected to get a good sensitivity and stability.…”
Section: Introductionmentioning
confidence: 99%