Optical and electrical properties of thermally evaporated In49Se48Sn3 films

Influence of composition on electrical and optical properties of new chalcogenide thin films from Ge–Se–Tl system

“…The variation of a with photon energy can be explained in terms of fundamental absorption, exciton absorption and valance band acceptor absorption. The values of the absorption coefficient (a) for Ge 20 Se 80À x Tl x thin films are in the range $ 10 4 cm À 1 , which is consistent with the result of other workers [50,51]. The values of the absorption coefficient (a) increases with increase in thallium concentration in Ge 20 Se 80À x Tl x system, which is due to the shifts in the absorption edge, more substantial atomic and molecular reconfiguration, which are associated with changes in optical constants and absorption edge shift.…”

“…The optical properties of amorphous semiconductor thin films are known to be sensitive to the preparation conditions [13]. A lot of research work [14][15][16][17][18][19][20][21][22] is concentrated on optical and electrical properties of chalcogenide thin films. Ahmad et al [23] has studied the electrical and optical properties of Sn 10 Sb 20À x Bi x Se 70 glassy films; Afifi et al [24] has studied the electrical and switching properties of the Se 90 Te 10À x Ag x films.…”

Influence of composition on the structure and optoelectronic properties of Pb$_{x}$In$_{25-x}$Se$_{75}$ thin films

“…The structure and phase diagram of the Pb-In-Se system were studied [23][24][25]. The optical properties of the lead chalcogenide and selenide chalcogenide have been studied by many authors [26][27][28][29][30][31].…”