Optical and electrical properties of Ge10+xSe40Te50−x thin film

Fayek, S.A.; El-Ocker, M. M.; Hassanien, Ahmed Saeed

doi:10.1016/s0254-0584(00)00478-8

Cited by 55 publications

(18 citation statements)

References 14 publications

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“…For As 14 Ge 14 Se 57 Sb 15 glass, the increase in the excess bonds (see table 2) results in a decrease in CE. This result is in good agreement with other studies [29][30][31].…”

Section: Resultssupporting

confidence: 94%

Characterization of new quaternary chalcogenide As–Ge–Se–Sb thin films

Dahshan

Aly

2008

Philosophical Magazine

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This paper reports the effect of replacement of selenium by antimony on the optical gap and some other physical parameters of new quaternary chalcogenide As 14 Ge 14 Se 72Àx Sb x (where x ¼ 3, 6, 9, 12 and 15 at%) thin films. Thin films with thickness 200-220 nm of As 14 Ge 14 Se 72Àx Sb x were prepared by thermal evaporation of the bulk samples. Increasing antimony content was found to affect the average heat of atomization, the average coordination number, number of constraints and cohesive energy of the As 14 Ge 14 Se 72Àx Sb x alloys. Optical absorption measurements showed that the fundamental absorption edge is a function of composition. Optical absorption is due to allowed, non-direct transition and the energy gap decreases with the increasing antimony content. The chemical bond approach has been applied successfully to interpret the decrease in the optical gap with increasing antimony content.

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“…For As 14 Ge 14 Se 57 Sb 15 glass, the increase in the excess bonds (see table 2) results in a decrease in CE. This result is in good agreement with other studies [29][30][31].…”

Section: Resultssupporting

confidence: 94%

Characterization of new quaternary chalcogenide As–Ge–Se–Sb thin films

Dahshan

Aly

2008

Philosophical Magazine

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“…The increase in the CE with increasing Ag content is due to the decrease in the excess of Sb-Sb homopolar bonds. This result is in good agreement with many authors [1,22,28].…”

Section: Resultssupporting

confidence: 94%

Characterization of new quaternary Ge 20 Se 60 Sb 20−x Ag x (0 ≤ x ≤ 20 at.%) glasses

Dahshan

Aly

2015

Journal of Non-Crystalline Solids

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“…It is observed that the CE increases with the increase in Bi content due to the decrease in the excess of Se-Se Table 3). These results are in accordance with several published data [41][42][43][44][45][46].…”

Section: Extinction Coefficient and The Optical Band Gapsupporting

confidence: 93%

Synthesis and characterization of Bi x (Se80Te20)100−x amorphous thin films

Abdel-Rahim

2015

Indian J Phys

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In this study, amorphous Bi x (Se 80 Te 20 ) 100-x glasses with (0 B x B 12) were prepared by the usual melt quench technique. Thin films of these glasses were deposited onto glass substrates by using thermal evaporation method. The amorphous nature of the as-prepared films was confirmed by X-ray diffraction. Structural investigations were performed using X-ray energy-dispersive spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The transmission spectra of these films were measured at normal incidence in the wavelength range 400-2500 nm. Swanepoel's analysis of the maxima and minima of the interference fringes was used to determine the film thickness, the complex index of refraction and the extinction coefficient with high accuracy. The dispersion of the refractive index was well discussed in terms of the single oscillator model (Wemple and DiDomenico). It was found that increasing Bi content led to the increase in refractive index and the extinction coefficient of the Bi x (Se 80 Te 20 ) 100-x films, while the optical band gap decreased. The mechanism of the optical absorption in Bi x (Se 80 Te 20 ) 100-x films obeyed the allowed indirect optical transition. The decrease in optical gap with increasing Bi content was discussed in terms of the chemical bond approach.

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Optical and electrical properties of Ge10+xSe40Te50−x thin film

Cited by 55 publications

References 14 publications

Characterization of new quaternary chalcogenide As–Ge–Se–Sb thin films

Characterization of new quaternary chalcogenide As–Ge–Se–Sb thin films

Characterization of new quaternary Ge 20 Se 60 Sb 20−x Ag x (0 ≤ x ≤ 20 at.%) glasses

Synthesis and characterization of Bi x (Se80Te20)100−x amorphous thin films

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