Optical and electrical multilevel storage in organic memory passive matrix arrays

Körner, Peter O.; Shallcross, R. Clayton; Maibach, Eduard; Köhnen, Anne; Meerholz, Klaus

doi:10.1016/j.orgel.2014.10.011

Cited by 19 publications

(19 citation statements)

References 25 publications

(36 reference statements)

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“…As long as the quantum isomerization yield of the photochromic component is high enough within a given matrix, our blending approach is versatile as it allows for tailoring to any desired DAE/polymer pair depending on the application at hand and the materials in use 34,[45][46][47] , contrary to the separate layer approach that is typically used in the context of organic two-and three-terminal memories 43,44 .…”

Section: Resultsmentioning

confidence: 99%

“…All of these characteristics can be met by DAEs 42 . In earlier studies, organic memories based on layered device architectures composed of DAE and triarylamine derivatives proved to be a valuable approach for the production of organic multilevel memories with 30 reported current levels 43,44 . However, the fabrication of multilayers clearly requires multistep processing, and the devices need several minutes of irradiation at high intensity to obtain a sufficient switching yield, making them unsuitable for applications in the electronic industry.…”

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confidence: 99%

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Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

et al. 2016

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Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logic circuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organic memories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well as the number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-film transistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromic diarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bit storage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses. We also report robustness over 70 write-erase cycles and non-volatility exceeding 500 days. The device was implemented on a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics and smart nanodevices.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

et al. 2016

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“…[ 11 ] Among various photochromic compounds, diarylethenes, due to their extraordinary thermal stability and fatigue resistance, are desirable candidates for applications where long-term stability and cyclability are required (e.g., nonvolatile memory). [ 11 ] Among various photochromic compounds, diarylethenes, due to their extraordinary thermal stability and fatigue resistance, are desirable candidates for applications where long-term stability and cyclability are required (e.g., nonvolatile memory).…”

Section: Doi: 101002/aelm201500230mentioning

confidence: 99%

Reversible Optical and Electrical Switching of Air‐Stable OFETs for Nonvolatile Multi‐Level Memories and Logic Gates

Qian

Wen

et al. 2015

Adv Elect Materials

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“…It is hard to obtain such a precision mask that can produce micron-level metal patterns; the smallest memory cells that have been obtained so far are around 100 µm. In actual organic memory devices reported so far, the level fluctuation is very large, [3,26,[29][30][31][32][33] and it is difficult to obtain enough SNR to achieve multilevel recording. [24][25][26][27][28] Multilevel recording requires a stable and distinct multilevel between the highest and lowest recording levels and a high signal-to-noise ratio (SNR); in other words, a large difference between the highest and lowest levels, and a small fluctuation in each level.…”

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confidence: 99%

Minute Organic Memory Fabricated by Laser Scanning and Selective Metal‐Vapor Deposition of a Diarylethene–Cu Composite Film

Tsujioka

Hoshimoto

2018

Adv Elect Materials

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restricted because, in general, the patterned electrode is fabricated by vacuum evaporation with a shadow mask. It is hard to obtain such a precision mask that can produce micron-level metal patterns; the smallest memory cells that have been obtained so far are around 100 µm. [4,[16][17][18][19][20][21][22][23] Another option for obtaining high memory density is multilevel recording. [24][25][26][27][28] Multilevel recording requires a stable and distinct multilevel between the highest and lowest recording levels and a high signal-to-noise ratio (SNR); in other words, a large difference between the highest and lowest levels, and a small fluctuation in each level. For example, to obtain four-times density (4 bits in a single memory cell), multilevel recording needs 2 4 = 16 distinguishable levels and, therefore, 16-times of an original SNR. More density by multilevel recording requires much larger SNR. In actual organic memory devices reported so far, the level fluctuation is very large, [3,26,[29][30][31][32][33] and it is difficult to obtain enough SNR to achieve multilevel recording. On the other hand, a half-size memory cell with the same SNR easily achieves four-times density. Therefore, reducing memory cell size, or preparing miniaturized electrodes, is very important to obtain high memory density.Photochromism is defined as a reversible change of molecular species and various properties of molecules-aggregation, film, composites, and/or bulk-including a crystal phase are changed as well as color. [34][35][36][37][38][39][40][41] Photochromic diarylethenes (DAEs) are well known as a series of photochromic molecules with very high stability in both isomerization states. [34,35] An interesting function of DAE is selective metal-vapor deposition. [42][43][44] Selective metal-vapor deposition signifies metalvapor atoms deposit on the colored surface generated by UV irradiation onto the DAE film but not on the colorless surface. Selective deposition originates in a large change in a glass transition temperature (T g ) of an amorphous DAE film based on photoisomerization. The core phenomenon of selective deposition is metal atom desorption from a low-T g colorless surface. Selective metal-vapor deposition can be applied to prepare fine metal patterns using maskless vacuum evaporation for electrical and optical devices. [45,46] In this article, we report a minute organic memory cell with a micron scale, in which an active memory layer is composed of a DAE-Cu composite film based on selective metal-vapor deposition.One of the major challenges in the field of organic electronics is miniaturization and integration of electrical components. Such miniaturization, however, has been restricted strictly so far because of the difficulty in fabricating minute electrodes on organic layers and their patterning. The conventional metal electrode has been fabricated generally using vacuum evaporation with a shadow mask, and the resolution of the shadow mask limits the electrode size. In this study, a minute organic memory cell fa...

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Optical and electrical multilevel storage in organic memory passive matrix arrays

Cited by 19 publications

References 25 publications

Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

Reversible Optical and Electrical Switching of Air‐Stable OFETs for Nonvolatile Multi‐Level Memories and Logic Gates

Minute Organic Memory Fabricated by Laser Scanning and Selective Metal‐Vapor Deposition of a Diarylethene–Cu Composite Film

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