Optical and electrical characterization of aluminium doped ZnO layers

Major, C.; Németh, Attila; Radnóczi, G.; Czigány, Zsolt; Fried, M.; Lábadi, Z.; Bársony, I.

doi:10.1016/j.apsusc.2009.06.088

Cited by 31 publications

(11 citation statements)

References 20 publications

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“…According to this Burstein-Moss-Shift, the band gap would increase with increasing carrier concentration [40,41]. intermittent illumination of the prepared AZO films.…”

Section: Accepted Manuscriptmentioning

confidence: 95%

Studies on the structural, morphological, optical and electrical properties of Al-doped ZnO nanorods prepared by electrochemical deposition

Henni

Merrouche

Telli

et al. 2016

Journal of Electroanalytical Chemistry

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“…According to this Burstein-Moss-Shift, the band gap would increase with increasing carrier concentration [40,41]. intermittent illumination of the prepared AZO films.…”

Section: Accepted Manuscriptmentioning

confidence: 95%

Studies on the structural, morphological, optical and electrical properties of Al-doped ZnO nanorods prepared by electrochemical deposition

Henni

Merrouche

Telli

et al. 2016

Journal of Electroanalytical Chemistry

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“…The multifunctional ZnO material is one of the most promising candidates for the fabrication of the next generation of optoelectronic devices. Besides being a wide band gap semiconductor with gap energy of 3.37 eV, ZnO has several desirable characteristics such as high transmittance in the visible region, low electrical resistivity and non toxicity [9,10]. More interest has been shown on TCOs based on doped ZnO films with cationic dopants such as Al, Ga, or B.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of Mn-Doped ZnO Thin Films Prepared by SILAR Method

Karunakaran

Maheswari

Kasirajan

et al. 2017

ILCPA

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Abstract. The growth of highly textured Mn doped Zinc oxide (ZnO) thin films with a preferred (002) orientation has been reported by employing successive ionic layer growth by adsorption reaction (SILAR) using a sodium zincate bath on glass substrates has been reported. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM) measurement. The XRD analysis reveals that the films were polycrystalline. Morphology of the films was found to be uniform with smaller grains and exhibits a structure with porous. The calculated Band gap value was found to be 3.21 eV prepared at 15 mM MnSO 4 concentration.

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“…Monitoring of the electrical properties of Al-doped ZnO layers by SE measurements are feasible by using the analytical expression suggested by Yoshikawa and Adachi [24], and the results show correlation between specific resistance and band gap energy and direct exciton strength parameter. [25] Characterization of SiH 2 content in a-Si:H For hydrogenated amorphous silicon (a-Si:H) layers prepared by plasma-enhanced chemical vapor deposition, SiH 2 bonds exist at the internal surface of the void-rich structure and light absorption reduces due to the void formation. In particular, the amplitude of the ε 2 spectra obtained from various a-Si:H layers is expressed completely by the SiH 2 bond density in the a-Si:H and reduces strongly with increasing the SiH 2 content, indicating that microvoids present in the a-Si:H network are surrounded by the SiH 2 bonding state.…”

Section: Se Analysis Of Textured Sno 2 :F Substratementioning

confidence: 99%

On-line monitoring of solar cell module production by ellipsometry technique

Fried

2014

Thin Solid Films

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Non-destructive analysing tools are needed at all stages of thin film photovoltaic (PV) development, and on production lines. In thin film PV, layer thicknesses, micro-structure, composition, layer optical properties, and their uniformity (because each elementary cell is connected electrically in series within a big panel) serve as an important starting point in the evaluation of the performance of the cell or module. An important focus is to express the dielectric functions of each component material in terms of a handful of wavelength independent parameters whose variation can cover all process variants of that material. With the resulting database, spectroscopic ellipsometry coupled with multilayer analysis can be developed for on-line point-by-point mapping and on-line line-by-line imaging.This work tries to review the investigations of different types of PV-layers (anti-reflective coating, transparent-conductive oxide (TCO), multi-diode-structure, absorber and window layers) showing the existing dielectric function databases for the thin film components of CdTe, CIGS, thin Si, and TCO layers.Off-line point-by-point mapping can be effective for characterization of non-uniformities in full scale PV panels in developing labs but it is slow in the on-line mode when only 15 points can be obtained (within 1 min) as a 120 cm long panel moves by the mapping station. In the last years [M. Fried et al, Thin Solid Films 519, 2730(2011], instrumentation was developed that provides a line image of spectroscopic ellipsometry (wl=350-1000 nm) data. Upto now a single 30 point line image can be collected in 10 s over a 15 cm width of PV material. This year we are building a 30 and a 60 cm width expanded beam ellipsometer the speed of which will be increased by 10X. Then 1800 points can be mapped in a 1 min traverse of a 60*120 cm PV panel or flexible roll-to-roll substrate.

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Optical and electrical characterization of aluminium doped ZnO layers

Cited by 31 publications

References 20 publications

Studies on the structural, morphological, optical and electrical properties of Al-doped ZnO nanorods prepared by electrochemical deposition

Studies on the structural, morphological, optical and electrical properties of Al-doped ZnO nanorods prepared by electrochemical deposition

Structural and Optical Properties of Mn-Doped ZnO Thin Films Prepared by SILAR Method

On-line monitoring of solar cell module production by ellipsometry technique

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