Optical and electrical characterization of boron-doped diamond films

Locher, R.; Wagner, J.; Fuchs, F.; Maier, M.; Gonon, P.; Koidl, P.

doi:10.1016/0925-9635(94)05297-2

Cited by 98 publications

(50 citation statements)

References 11 publications

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“…film up to 3.3x10 21 cm -3 in the heavily boron doped NCD film ( Table I). The SIMS profiles for B-doped NCD films are depicted in Fig.…”

Section: A Structural Propertiesmentioning

confidence: 99%

“…23,24 Finally, the influence of the boron acceptor on the structural and optoelectronic properties of the diamond films were investigated for single and polycrystalline diamond films. 21,22,[26][27][28][29][30][31] However, the same sort of detailed investigation is still missing for boron-doped NCD films. As it has been discussed for polycrystalline diamond films 22 and UNCD films, 32 it is essential to understand the influence of the grain boundaries on the optical properties of NCD and the role they play in the electronic transport.…”

Section: Introductionmentioning

confidence: 99%

“…15,16 The p-type doping of diamond with boron has been extensively examined in single crystal (SCD) homoepitaxially grown material, 17,18,19,20 as well as in polycrystalline materials (PCD). 21,22 In the case of heavily boron doped samples, superconductivity has been reported. 23,24 Finally, the influence of the boron acceptor on the structural and optoelectronic properties of the diamond films were investigated for single and polycrystalline diamond films.…”

Section: Introductionmentioning

confidence: 99%

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Electronic and optical properties of boron-doped nanocrystalline diamond films

et al. 2009

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We report on the electronic and optical properties of boron-doped nanocrystalline diamond (NCD) thin films grown on quartz substrates by CH 4 /H 2 plasma chemical vapor deposition.Diamond thin films with a thickness below 350 nm and with boron concentration ranging from 10 17 cm -3 to 10 21 cm -3 have been investigated. UV Raman spectroscopy and AFM have been used to assess the quality and morphology of the diamond films. Hall effect measurements confirmed the expected p-type conductivity. At room temperature, the conductivity varies from 1.5x10 -8 Ω -1 cm -1 for a non-intentionally doped film up to 76 Ω -1 cm -1 for a heavily B-doped film. Increasing the doping level results in a higher carrier concentration while the mobility decreases from 1.8 cm 2 V -1 s -1 down to 0.2 cm 2 V -1 s -1 . For NCD films with low boron concentration, the conductivity strongly depends on temperature. However, the conductivity and the carrier concentration are no longer temperature-dependent for films with the highest boron doping, and the NCD films exhibit metallic properties. Highly doped films show superconducting properties with critical temperatures up to 2K. The critical boron concentration for the metal-insulator transition is in the range from 2x10 20 cm -3 up to 3x10 20 cm -3 . We discuss different transport mechanisms to explain the influence of the grain boundaries and boron doping on the electronic properties of NCD films. Valence band transport dominates at low boron concentration and high temperatures, 2 whereas hopping between boron acceptors is the dominant transport mechanism for boron doping concentration close to the Mott transition. Grain boundaries strongly reduce the mobility for low and very high doping levels. However, at intermediate doping levels where hopping transport is important, grain boundaries have a less pronounced effect on the mobility. The influence of boron and the effect of grain boundaries on the optoelectronic properties of the NCD films are examined using spectrally resolved photocurrent measurements and photothermal deflection spectroscopy. Major differences occur in the low energy range, between 0.5 -1.0 eV, where both Boron impurities and the sp 2 carbon phase in the grain boundaries govern the optical absorption.

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“…film up to 3.3x10 21 cm -3 in the heavily boron doped NCD film ( Table I). The SIMS profiles for B-doped NCD films are depicted in Fig.…”

Section: A Structural Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electronic and optical properties of boron-doped nanocrystalline diamond films

et al. 2009

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“…Hydrogen plays an important role in the CVD process (see, e.g., Goodwin and Butler, 1998), and because it is typically the most abundant gas in the growth environment, it is likely to be found in the resulting material. Nitrogen and boron content may result from deliberate or accidental sources in the growth process (see, e.g., Muller-Sebert et al, 1996;Locher et al, 1995), and silicon is often present as an unintentional impurity (see, e.g., Zaitsev, 2001, pp. 174-181).…”

Section: Cut Color Claritymentioning

confidence: 99%

Identification of Synthetic Diamond Grown Using Chemical Vapor Deposition (CVD)

Martineau¹,

Lawson²,

Taylor³

et al. 2004

Gems & Gemology

140

151

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Studies carried out at the DTC Research Centre have shown that single-crystal CVD synthetic diamond is clearly distinguishable from natural diamond. This article presents information about the CVD process, the history of its development, the different kinds of CVD synthetic diamond material that can be produced, and properties that differentiate them from natural diamond. The authors studied more than a thousand CVD synthetic diamond samples that were grown for research purposes using a range of different process conditions. Absorption, photoluminescence, and cathodoluminescence spectra of these CVD synthetic diamond samples showed a range of different impurity-related features not seen in natural diamond. Photoluminescence imaging is also useful in identifying CVD synthetic diamond, and X-ray topography may give supportive evidence. The effectiveness of the Diamond Trading Company Diamond Verification Instruments for identifying CVD synthetic diamond is also described.

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“…This is a surprising result in view of the pronounced impurity level/growth sector dependence generally observed for synthetic diamond. For example, boron and nitrogen impurities in CVD diamond are preferentially incorporated in the {111} growth sector, and the impurity level found in the {100} growth sector is lower by at least a factor of three [29][30][31]. Similarly, Ni impurities in HPHT diamond have been found to be concentrated in {111} growth sectors [10].…”

Section: Doping Level and Dopant Distributionmentioning

confidence: 99%