Optical and electrical characteristics of Ga-Zn-O thin films prepared by RF magnetron co-sputtering system

Kim, Nam‐Jung; Shin, Naeho; Hwang, Chang-Su

doi:10.1016/j.spmi.2016.11.028

Cited by 7 publications

(2 citation statements)

References 28 publications

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“…Against the background of the already known fact that Ga is a more efficient donor for ZnO than Al [ 23 , 24 , 25 ], the first of the above regularities (ρ 2GZO < ρ 1A1GZO < ρ 2GZO ) seems logical. The second founded regularity (namely, that the simultaneous doping of ZnO with 2 at.% Al and 2 at.% Ga led to a noticeable decrease in resistivity compared with single-doped films), from our point of view, requires further research and correct interpretations, since doped-ZnO TCO thin films are usually characterized by the presence of an optimal impurity doping level in the region of 2–3 at.%, above which a deterioration in electrical properties is usually observed due to various impurity-induced distortions in the host ZnO microstructure [ 26 , 27 , 28 , 29 ].…”

Section: Resultsmentioning

confidence: 99%

On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films

Асваров

Abduev²,

Akhmedov

et al. 2022

Materials

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In this study, a set of ZnO-based thin films were prepared on glass substrates at various substrate temperatures via the direct current magnetron sputtering of ceramic targets with the following compositions: pure ZnO, Al-doped ZnO with doping levels of 1 and 2 at.%, Ga-doped ZnO with doping levels of 1 and 2 at.%, and (Al, Ga)-co-doped ZnO with doping levels of 1 and 2 at.% for each impurity metal. The dependencies of sheet resistance, carrier concentration, and Hall mobility on the substrate temperature were studied for the deposited films. The results of evaluating the electrical performances of the films were compared with the data of their XRD study. According to the XRD data, among all the deposited ZnO films, the maximum crystallinity was found in the co-doped thin film with doping levels of 2 at.% for each impurity metal, deposited at a substrate temperature of 300 °C. It was revealed that the observed increase in the Hall mobility and carrier concentration for the co-doped films may, in particular, be due to the difference in the preferred localization of Ga and Al impurities in the ZnO film: the Ga ions were mainly incorporated into the crystal lattice of ZnO nanocrystallites, while the Al impurity was mostly localized in the intercrystalline space at the grain boundaries.

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Section: Resultsmentioning

confidence: 99%

On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films

Асваров

Abduev²,

Akhmedov

et al. 2022

Materials

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“…Generally, ZnO thin films can be obtained through multiple preparation methods such as sol-gel [10], magnetron sputtering [11], chemical vapour deposition [12,13], pulsed laser deposition [14,15], atomic layer deposition [16,17] and RF magnetron sputtering [18][19][20][21]. Among them, RF magnetron sputtering technology is widely employed in various semiconductor research due to its high deposition rate and availability of large area film [22]. To obtain high-quality ZnO thin films, the sputtering target of ZnO thin films was investigated, i.e.…”

Section: Introductionmentioning

confidence: 99%

Comparative study on structure and properties of ZnO thin films prepared by RF magnetron sputtering using pure metallic Zn target and ZnO ceramic target

Fang

2018

Surface Engineering

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In this work, ZnO thin films was deposited onto Si substrate by ablation of different sputtering targets (ZnO ceramic target and pure metallic Zn target) under different substrate temperatures from 300°C to 600°C with intervals of 100°C, and the properties of ZnO thin films were analysed. The results showed that ZnO thin films had the c-axis preferred orientation and it also presented optimised properties owing to the reduction of thin film defects at a substrate temperature of 400°C. By analysing data, it could also be seen that the performance of ZnO thin films fabricated using the ZnO ceramic target was better than that of ZnO thin films fabricated using the pure metallic Zn target. It was considered that the excellent properties of ZnO thin films fabricated using the ZnO ceramic target were attributed to the decrease in oxygen vacancies and the reduction of film defects.

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Improved GZO Thin Film Structures by Nitrogen-Mediated Crystallization Process to Apply to Touch Sensing

Lin

Teng

Jiang

2023

J. Electron. Mater.

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Optical and electrical characteristics of Ga-Zn-O thin films prepared by RF magnetron co-sputtering system

Cited by 7 publications

References 28 publications

On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films

On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films

Comparative study on structure and properties of ZnO thin films prepared by RF magnetron sputtering using pure metallic Zn target and ZnO ceramic target

Improved GZO Thin Film Structures by Nitrogen-Mediated Crystallization Process to Apply to Touch Sensing

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