Optical and Electrical Analysis of Core-Shell ZnO/ZnTe Micropillar Solar Cells

Kabalan, Amal; Sohid, Sadia Binte

doi:10.1109/jeds.2020.3007810

Cited by 2 publications

(2 citation statements)

References 22 publications

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“…Total defect density (cm − 3 ) 1.0×10 14 10 12 -10 18 1.0×10 14 1.0×10 14 ZnTe absorber and this barrier height assists in preventing photo-generated electrons (PGEs) passing into the rear electrode [52]. The valence band energy of ZnTe is substantially lower than that of the CdS buffer which has a large bandgap of 2.43 eV.…”

Section: ……………………………………mentioning

confidence: 99%

“…Among II-VI materials, CdTe has been managed to gain signi cant interest in solar cell technology and so many reports are presented due to the potential for higher PCE (18-24%) and absorption coe cient, which demand thin layer of material utilization for their manufacturing [13]. Due to its toxicity, Cd demonstrates environmental threat, particularly after a PV module approaches the end of its useful life [14].…”

Section: Introductionmentioning

confidence: 99%

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Improving the efficiency of ZnTe based heterojunction solar cell with In2Te3 BSF layer

Ali,

Haque,

Hossain

et al. 2023

Preprint

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Zinc telluride (ZnTe) is considered as a favorable photovoltaic (PV) material for its desirable absorption coefficient, improved conversion efficiency, and consequently inexpensive production material requirements. The unsuitability of the solar cell structure and band alignment at the buffer/absorber and absorber/BSF interface as well as carrier recombination at the front and back metal contact prevents the probable result from being achieved. The principal objective of this research is to improve the performance of newly designed Al/ZnO/CdS/ZnTe/In2Te3/Pt solar cell and to investigate the influence of the Indium telluride (In2Te3) back surface field (BSF) layer on the performance parameters of open circuit voltage (Voc), short circuit current (Jsc), fill factor (FF), and power conversion efficiency (PCE). This simulation analyses the performance of the baseline structure Al/ZnO/CdS/ZnTe/Pt which is consider as without BSF and the proposed structure Al/ZnO/CdS/ZnTe/In2Te3/Pt which is consider as with BSF. The thickness, carrier density and bulk defect density of every layer, defect density at BSF/absorber and buffer/absorber interface, working temperature, back surface recombination velocity (SRV) as well as shunt and series resistance has been studied using SCAPS-1D simulator. The PCE has been achieved 20.20% with VOC of 2.008 V, JSC of 10.99 mA/cm2 and FF of 91.92% for the proposed solar cell with In2Te3 BSF layer by using thicknesses of around 30 nm, 30 nm, 500 nm and 100 nm for ZnO, CdS, ZnTe, and In2Te3, respectively. The present study provides the guidelines for the realization of high efficiency and thin ZnTe based solar cell in cost effective way.

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Section: ……………………………………mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improving the efficiency of ZnTe based heterojunction solar cell with In2Te3 BSF layer

Ali,

Haque,

Hossain

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

Improving the efficiency of ZnTe based heterojunction solar cell with In2Te3 BSF layer

Ali,

Haque,

Hossain

et al. 2023

J Appl Electrochem

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Zinc telluride (ZnTe) is considered as a favorable photovoltaic (PV) material for its desirable absorption coe cient, improved conversion e ciency, and consequently inexpensive production material requirements. The unsuitability of the solar cell structure and band alignment at the buffer/absorber and absorber/BSF interface as well as carrier recombination at the front and back metal contact prevents the probable result from being achieved. The principal objective of this research is to improve the performance of newly designed Al/ZnO/CdS/ZnTe/In 2 Te 3 /Pt solar cell and to investigate the in uence of the Indium telluride (In 2 Te 3 ) back surface eld (BSF) layer on the performance parameters of open circuit voltage (V oc ), short circuit current (J sc ), ll factor (FF), and power conversion e ciency (PCE). This simulation analyses the performance of the baseline structure Al/ZnO/CdS/ZnTe/Pt which is consider as without BSF and the proposed structure Al/ZnO/CdS/ZnTe/In 2 Te 3 /Pt which is consider as with BSF. The thickness, carrier density and bulk defect density of every layer, defect density at BSF/absorber and buffer/absorber interface, working temperature, back surface recombination velocity (SRV) as well as shunt and series resistance has been studied using SCAPS-1D simulator. The PCE has been achieved 20.20% with V OC of 2.008 V, J SC of 10.99 mA/cm 2 and FF of 91.92% for the proposed solar cell with In 2 Te 3 BSF layer by using thicknesses of around 30 nm, 30 nm, 500 nm and 100 nm for ZnO, CdS, ZnTe, and In 2 Te 3 , respectively. The present study provides the guidelines for the realization of high e ciency and thin ZnTe based solar cell in cost effective way. research using the SCAPS-1D software.

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Optical and Electrical Analysis of Core-Shell ZnO/ZnTe Micropillar Solar Cells

Cited by 2 publications

References 22 publications

Improving the efficiency of ZnTe based heterojunction solar cell with In2Te3 BSF layer

Improving the efficiency of ZnTe based heterojunction solar cell with In2Te3 BSF layer

Improving the efficiency of ZnTe based heterojunction solar cell with In2Te3 BSF layer

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