Optical and crystal improvements of semipolar (11-22) GaN/m-sapphire by in-situ thermal etching process

Song, Kiwon; Dong-Sub, Oh，; Lee, Sung‐Nam

doi:10.1016/j.cap.2013.05.020

Cited by 11 publications

(2 citation statements)

References 26 publications

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“…However, a few studies have proven that the utilization of simpler yet effective approaches would attain high-quality semipolar GaN. This includes the use of a double aluminum nitride (AlN) or GaN nucleation layer, 20 in situ thermal etching I-STEP technique, 21 nitride (SiN) interlayer, 22 indium nitride (InN) interlayer, 23 in situ asymmetric island sidewall growth (AISG) technique, 24,25 and graded superlattices of AlN/AlGaN as well as AlGaN/ AlGaN. 26 Despite the mentioned novel techniques, there is yet wellestablished research conducted in order to thoroughly investigate the use of AlN and GaN alternating multilayers (ML) for defect reduction in semipolar (11−22) on a planar m-plane.…”

Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template

Makinudin

Omar

Anuar

et al. 2019

Crystal Growth & Design

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Efficient reduction of defects and dislocations in a semipolar (11− 22) GaN epilayer with the use of an AlN/GaN strained periodic multilayer is demonstrated. On-and off-axis X-ray rocking curve analyses have shown significant improvement in the crystalline qualities with remarkable narrowing in their respective full width at half-maximum upon utilization of increased AlN/GaN pairs. X-ray reciprocal space mapping revealed a prominent increment in the degree of relaxation state, with notable shrinkage in the diffuse scattering streak. Structural evaluation via transmission electron microscopey illuminates the interruption of defect and dislocation propagation due to the strained periodic multilayers. It was observed that the first 20th pairs exhibited a three-dimensional growth mode owning to numerous defects originating from the AlN/sapphire interface. Such a phenomenon was found to have a positive impact toward accumulating the propagation of defects. The surface morphology analysis elucidates the reduced stripe-like undulations, whereby the terrace-like features in the lower scales endured an enhanced rearrangement favoring the reduced defect density.

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