Optical activity in []ZnGa2S4

Joshi, N.V.; Luengo, Jorge; Vera, Fatima

doi:10.1016/j.matlet.2006.07.177

Cited by 21 publications

(8 citation statements)

References 8 publications

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“…; Q = S, Se) tetrahedra. Up to now, numbers of new MIR NLO crystals based on chalcogenides have been discovered, including Ga 2 S 3 , LiInS 2 , , Li 2 CdGeS 4 , Li 2 MnGeS 4 , LiGaGe 2 S 6 , KHg 4 Ga 5 Se 12 , RbGeP 4 Se 12 , Ba 8 Sn 4 S 15 , BaGa 4 Se 7 , Ba 3 CsGa 5 Se 10 Cl 2 , Cu 2 HgGeS 4 , Ag 2 CdGeS 4 , MGa 2 S 4 (M = Zn, Cd), , etc. However, materials that meet all of the fundamental conditions of practical applications are still scarce.…”

Section: Introductionmentioning

confidence: 99%

LiGa₂PS₆ and LiCd₃PS₆: Molecular Designs of Two New Mid-Infrared Nonlinear Optical Materials

Feng

et al. 2018

Chem. Mater.

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To simultaneously maintain large second harmonic generation (SHG) and high laser damage thresholds (LDTs) for mid-and far-infrared (IR) nonlinear optical (NLO) materials is very challenging and significant in laser science and technology. Using a chemical substitution strategy, two new mid-infrared NLO materials based on metal thiophosphates, namely, LiGa 2 PS 6 and LiCd 3 PS 6 , have been obtained from AgGa 2 PS 6 . They both crystallize in the Cc space group but exhibit different structures. LiGa 2 PS 6 is isostructural with the parent AgGa 2 PS 6 , displaying a three-dimensional (3D) anionic framework of [Ga 2 PS 6 ] − composed of [Ga 2 S 6 ] 6− chains and PS 4 tetrahedra with the 1D triangular-shaped tunnels filled by Li + ions. LiCd 3 PS 6 features a 3D anionic framework of [Cd 3 S 6 ] 6− composed of 2D layers of [Cd 2 S 5 ] 6− and the bridging CdS 4 units with 1D tunnels along the b-axis filled by [LiPS 6 ] 6− chains. Remarkably, both materials display large band gaps of 3.15 eV (for LiGa 2 PS 6 ) and 2.97 eV (for LiCd 3 PS 6 ), and keep a good balance between strong SHG responses (0.5−0.8 × AgGaS 2 at 1910 nm in the particle range 53−71 μm) and high LDTs (5.5−10.4 × AgGaS 2 ); therefore both crystals are new promising mid-IR NLO materials.

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Section: Introductionmentioning

confidence: 99%

LiGa₂PS₆ and LiCd₃PS₆: Molecular Designs of Two New Mid-Infrared Nonlinear Optical Materials

Feng

et al. 2018

Chem. Mater.

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“…6 OVCs are used as gyrotropic media in narrow-band optical filters, and in particular CdGa 2 Se 4 has already found practical applications as a tunable filter and ultraviolet photodetector. 7,8 In addition, this compound is a promising optoelectronic material due to its high values of nonlinear susceptibility, optical activity, intense luminescence, and high photosensitivity. 2 CdGa 2 Se 4 is an OVC of the A II B 2 III X 4 VI family that crystallizes in the tetragonal DC structure 9,10 as depicted in Fig.…”

Section: Introductionmentioning

confidence: 99%

High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds

Gomis

Vilaplana

Manjón

et al. 2012

Journal of Applied Physics

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High pressure structural stability of BaLiF3 J. Appl. Phys. 110, 123505 (2011) Pressure effects on the transitions between disordered phases in supercooled liquid silicon J. Chem. Phys. 135, 204508 (2011) Microfabrication of controlled-geometry samples for the laser-heated diamond-anvil cell using focused ion beam technology Rev. Sci. Instrum. 82, 115106 (2011) First-principles investigations of elastic stability and electronic structure of cubic platinum carbide under pressure J. Appl. Phys. 110, 103507 (2011) Additional information on J. Appl. Phys. High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa 2 Se 4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase transitions taking place in this ordered-vacancy compound. Our measurements reveal that on decreasing pressure from 22 GPa, the sample does not revert to the initial phase but likely to a disordered zinc blende (DZ) structure the direct bandgap and Raman-active modes of which have been measured during a second upstroke. Our measurements have been complemented with electronic structure and lattice dynamical ab initio calculations. Lattice dynamical calculations have helped us to discuss and assign the symmetries of the Raman modes of the DC phase. Additionally, our electronic band structure calculations have helped us in discussing the order-disorder effects taking place above 6-8 GPa during the first upstroke.

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“…2 They are interesting also in photovoltaics, 5 in diluted magnetic semiconductors, 6 and have already found practical applications as tunable filters and ultraviolet photodetectors. 7,8 High-pressure (HP) studies on A II B 2 III X 4 VI compounds are receiving increasing attention in the last years. [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] In particular, the AGa 2 Se 4 (A ¼ Mn, Zn, and Cd) family has been studied by X-ray diffraction (XRD), Raman spectroscopy, and optical absorption.…”

Section: Introductionmentioning

confidence: 99%

High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4

Gomis¹,

Vilaplana²,

Manjón³

et al. 2013

Journal of Applied Physics

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In this work, we focus on the study of the structural and elastic properties of mercury digallium selenide (HgGa 2 Se 4) which belongs to the family of AB 2 X 4 ordered-vacancy compounds with tetragonal defect chalcopyrite structure. We have carried out high-pressure x-ray diffraction measurements up to 13.2 GPa. Our measurements have been complemented and compared with total-energy ab initio calculations. The equation of state and the axial compressibilities for the lowpressure phase of HgGa 2 Se 4 have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The theoretical cation-anion and vacancy-anion distances in HgGa 2 Se 4 have been determined. The internal distance compressibility in HgGa 2 Se 4 has been compared with those that occur in binary HgSe and eÀGaSe compounds. It has been found that the Hg-Se and Ga-Se bonds behave in a similar way in the three compounds. It has also been found that bulk compressibility of the compounds decreases following the sequence "e-GaSe > HgGa 2 Se 4 > HgSe." Finally, we have studied the pressure dependence of the theoretical elastic constants and elastic moduli of HgGa 2 Se 4. Our calculations report that the low-pressure phase of HgGa 2 Se 4 becomes mechanically unstable above 13.3 GPa. V

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Optical activity in []ZnGa2S4

Cited by 21 publications

References 8 publications

LiGa₂PS₆ and LiCd₃PS₆: Molecular Designs of Two New Mid-Infrared Nonlinear Optical Materials

LiGa₂PS₆ and LiCd₃PS₆: Molecular Designs of Two New Mid-Infrared Nonlinear Optical Materials

High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds

High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4

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Optical activity in []ZnGa2S4

Cited by 21 publications

References 8 publications

LiGa2PS6 and LiCd3PS6: Molecular Designs of Two New Mid-Infrared Nonlinear Optical Materials

LiGa2PS6 and LiCd3PS6: Molecular Designs of Two New Mid-Infrared Nonlinear Optical Materials

High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds

High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4

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LiGa₂PS₆ and LiCd₃PS₆: Molecular Designs of Two New Mid-Infrared Nonlinear Optical Materials

LiGa₂PS₆ and LiCd₃PS₆: Molecular Designs of Two New Mid-Infrared Nonlinear Optical Materials