Optical absorption study of 100-MeV chlorine ion-irradiated hydroxyl-free ZnO semiconductor quantum dots

Mohanta, Dambarudhar; Nath, S.; Bordoloi, Anup Kr.; Choudhury, Arup; Dolui, S. K.; Mishra, N. C.

doi:10.1063/1.1518751

Cited by 25 publications

(15 citation statements)

References 24 publications

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“…On the contrary we observe grain growth and texturing in NiO thin films subjected to 120 MeV Au irradiation. In a few cases irradiation has been shown to result in improvement in crystallization [3,[6][7][8][9][10]. This is particularly true for thin solid films, which are not in thermodynamic equilibrium.…”

Section: Resultsmentioning

confidence: 99%

Observation of grain growth in swift heavy ion irradiated NiO thin films

et al. 2010

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NiO thin films grown on Si(100) substrates by electron beam evaporation, were sintered at 500 0 C and 700 0 C. The films were irradiated with 120 MeV Au 9+ ions. Irradiation had different effects depending upon the initial microstructure of the films. Irradiation of the films at a fluence of 3 × 10 11 ions cm -2 leads to grain growth for the films sintered at 500 0 C and grain fragmentation for the films sintered at 700 0 C. At still higher fluences of irradiation, grain size in 500 0 C sintered film decreased, but the same improved in 700 0 C sintered film. Associated with the grain size, texturing of the films was also shown to undergo significant modifications under irradiation.

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Section: Resultsmentioning

confidence: 99%

Observation of grain growth in swift heavy ion irradiated NiO thin films

et al. 2010

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“…Optical absorption spectroscopy [6] shows sharp blue shifted absorption edge of the prepared samples with respect to that of bulk ( Figure 1). Blue shift is a distinct signature of quantum dot formation [1,3,4] (Figure 1).…”

Section: Resultsmentioning

confidence: 99%

“…have been adopted to synthesize semiconductor quantum dots. But due to manifold advantages [3,6] viz. like simplicity, low cost, etc.…”

Section: Introductionmentioning

confidence: 99%

ZnO: PVP Quantum Dot Ethanol Sensor

Choudhury¹,

Nath²,

Nath³

2011

JST

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We prepare of ZnO quantum dots embedded in polyvinylpyrrolidone (PVP) matrix and report it's working as ethanol sensor. The samples have been prepared via quenching technique where bulk ZnO powder is calcined at very high temperature of 1200˚C and then quenched into ice cold polyvinylpyrrolidone solution. Thee acteiut the samples specimen have been characterized by using UV/VIS spectroscopy, X-ray diffracttion study and high resolution transmission electron microscopy (HRTEM). These studies indicate the sizes of quantum dots to be within 10 nm. The prepared quantum dot samples have been examined for ethanol vapour sensing by exploring the variation of their resistance with time at different operating temperatures. It has been revealed that ZnO quantum dots can sense ethanol at low operating (230˚C) temperature with less response time.

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“…A good diamond thin film is hardly affected by SHI irradiation whereas a fullerene film transforms to an amorphous carbon (state) under SHI irradiation. The formation of dimers and trimers of fullerene also referred to as polymerisation of Fullerene 58,59 has also been observed at low fluences of swift heavy ions. It is postulated that the annular cylindrical region surrounding the ion path, has such temperature and pressure conditions that favour transition from fullerene to its dimmer or polymer, as shown in the schematic in Fig.…”

Section: Modifications In Diamond Like Carbon (Dlc) Andmentioning

confidence: 92%

“…11. The band gap of the irradiated film decreases drastically with fluence 58 . The changes in the DLC type of films depend on its initial D and G bands intensities and widths.…”

Section: Modifications In Diamond Like Carbon (Dlc) Andmentioning

confidence: 99%

Modification and Characterisation of Materials by Swift Heavy Ions

Avasthi¹

2009

DSJ

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Swift heavy ions (SHI) available with 15 million Volt Pelletron accelerator at Inter University Accelerator Centre (IUAC) Delhi, formerly known as Nuclear Science Centre, (NSC), provide a unique opportunity to researchers for accelerator based materials science research. The major research areas can be broadly categorised as electronic sputtering, interface modifications, synthesis and modification of nanostructures, phase transitions and ion beam-induced epitaxial crystallisation. In, general, SHI irradiation based-materials may not be economically feasible, still it could be of interest for very specific cases in defence and space research. The paper gives a glimpse of the current research activities in materials science with SHIs, at IUAC.Keywords: Swift heavy ions, SHI, materials science, materials research systhesis of materials, characterisation of materials, nuclear energy loss, ion energy loss, electronic energy-loss-defects in materials, defect engineering INTRODUCTIONThe ions with energy ranging from a fraction of keV to GeV are useful in synthesis, modification and characterization of materials. The energetic ions during their passage through a material loose energy via two processes. These are nuclear energy loss S n and electronic energy loss S e . In the former process, the energy is lost by elastic collisions of incident ions with the atoms in the material, which is dominant at low energies. In the electronic energy loss process, dominant at high energies (>1 MeV/nucleon), the energy is lost by inelastic collisions of the ion with the atoms, leading to excitation or ionisation of the atoms. At these energies of heavy ions, the velocity of the ion is comparable to or higher than the velocity of Bohr electron. The ions with such high energies are also referred to as Swift Heavy Ions (SHI). The electronic energy loss for SHI is, generally, about two orders of magnitude higher than the nuclear energy loss1 . An interesting characteristic of the SHI is that it creates a columnar type of defect along its path (called as ion track), specially, in insulators. SHI during its passage through material can cause defect annealing, cluster of point defects and columnar type of defects depending on the mass and energy of the ion and the material. Therefore the SHI can be used for engineering the defects in the materials. The parameters of ion beam, which play crucial role in defect engineering, are the energy deposited per unit length and the fluence.The ion mass and its energy, decide the magnitudes of the electronic as well as nuclear energy losses. Especially for heavy ions at high energies (i.e., for SHI), the electronic energy loss decides the type of defects as the nuclear energy loss. The other ion beam parameter, fluence, dictates the number of defects (produced). The number of ion

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Optical absorption study of 100-MeV chlorine ion-irradiated hydroxyl-free ZnO semiconductor quantum dots

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Cited by 25 publications

References 24 publications

Observation of grain growth in swift heavy ion irradiated NiO thin films

Observation of grain growth in swift heavy ion irradiated NiO thin films

ZnO: PVP Quantum Dot Ethanol Sensor

Modification and Characterisation of Materials by Swift Heavy Ions

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