Optical absorption in MnIn2S4 single crystals

Semiconductor Sensitization by Microcrystals of MgIn2S4 on Wide Bandgap MgIn2O4

“…It has been reported that the density of such porous sintered MgIn O pellets is less than that of single crystals (12). Small round bright (10,14,15). The bandgap energy of MgIn S was evaluated as 2.1 eV.…”

Structural and optical high‐pressure study of spinel‐type MnIn2S4

“…This family of materials is interesting for optoelectronic applications because they have shown nonlinear optical properties, like nonlinear optical susceptibility combined with natural birefringence [1]. In particular, MnIn 2 S 4 is a very promising candidate for optoelectronic applications such as solar cell windows because it has an optical direct energy gap of 1.95 eV [2] that can be modified after suitable doping or by changing the cation concentration [3]. An important aspect of this semiconductor is that both cations Mn and In have nearly the same ionic radii for the same coordination [4].…”

Growth phases in the formation of semiconducting manganese indium sulphide thin film and their effect on the optical absorption

“…Single-crystal studies have shown that MnIn 2 S 4 has a direct optical energy gap. A fundamental absorption edge lies in the range 1.92-1.95 eV [9]. On the other hand, constituent phases indium sulphide and manganese sulphide have direct optical band gaps of 1.95 eV [23] show a higher transmission and a comparatively sharper absorption edge.…”

“…Besides, the crystalline structure of the material, it has a big influence on its properties [7,8]. MnIn 2 S 4 shows n-type conductivity and has an optical energy gap of 1.95 eV [9]. This provides potential for use as heterojunction layers in solar cells.…”

“…This provides potential for use as heterojunction layers in solar cells. Most previous studies of optical and electrical properties of MnIn 2 S 4 have been performed on materials in single crystal form [7,9,10]. For photovoltaic application thin films are usually needed.…”