2012
DOI: 10.1134/s0030400x12070144
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Optical absorption in MnIn2S4 single crystals

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Cited by 5 publications
(3 citation statements)
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“…2a). The linear dependence of (α -α d ) 2 on hν indicates that the intrinsic absorption edge in MnGaInS 4 single crystals is formed by direct allowed transitions [20,25]. At different temperatures, the band gap is deter mined by extrapolation of straight lines (α -α d ) 2 = hν to (α -α d ) = 0.…”
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“…2a). The linear dependence of (α -α d ) 2 on hν indicates that the intrinsic absorption edge in MnGaInS 4 single crystals is formed by direct allowed transitions [20,25]. At different temperatures, the band gap is deter mined by extrapolation of straight lines (α -α d ) 2 = hν to (α -α d ) = 0.…”
mentioning
confidence: 99%
“…
Recently, multicomponent compounds of the AB 2 X 4 type (A is Mn, Fe, Co, or Ni; B is Ga or In; and X is S, Se, or Te) have been of great interest because they can expand the functional possibilities of modern semiconductor electronics [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. These compounds are promising for semiconductor devices of various functional purposes.
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