Optical-Absorption Edge and Raman Scattering inGexSe1−xGlasses

Sur une nouvelle forme cristalline de GeSe2

“…connue de ce compos6 (Ch'iin-Hua, Pashinkin & Novoselova, 1962;Wiedemeier, Irene & Chaudhuri, 1972 Notons enfin que par recuit des verres GexSet_~, pr6-par6s au C.N.E.T., de compositions diverses (0,2 < x < 0,42) (Tronc, Bensoussan, Brenac & Sebenne, 1973) on provoque leur recristallisation en GeSez, sous la forme d6crite dans cet article. I1 est remarquable que par des m6thodes d'obtention du cristal GeSez, aussi diff6rentes que celles qui viennent d'etre 6num6r6es, c~ soit toujours la nouvelle vari6t6 de ce compos6 qui soit pr6par6e, distincte de la forme publi6e jusqu'b, pr6sent.…”

Investigation of Physical and Electronic Properties of GeSe for Photovoltaic Applications

“…GeSe has emerged as a promising absorber material for photovoltaic applications owing to its intriguing properties such as suitable bandgap of 1.14 eV (optimal for single junction solar cells), [1][2][3][4] high absorption coefficient about 10 5 cm −1 in the visible region, [5][6][7] high hole mobility (128.6 cm 2 V −1 s −1…”

“…), [8] simple binary compound with fixed orthorhombic phase at room temperature, [9,10] low toxicity, and relatively earth-abundant constituents. [11][12][13][14] Additionally, the congruent sublimation feature of GeSe makes it ideal for thin film deposition through thermal sublimation, entirely compatible with conventional processing methods for CdTe thin-film solar cells.…”

Raman scattering study of the a-GeTe structure and possible mechanism for the amorphous to crystal transition

“…On the experimental side germanium sulfides [20] and selenides [21] have been studied in the glassy state (bulk glasses) using Raman spectroscopy for x up to 0.45 and 0.4, respectively, while amorphous thin films of germanium tellurides [10] have been studied over a much wider GeTe 3 Ge, 37.5 % GeTe 2 Ge 2 , 25% GeTeGe 3 , and 6.25% GeGe 4 .…”