Optical Absorption as a Control Test for Plasma Silicon Nitride Deposition

Rand, Myron J.; Wonsidler, D. R.

doi:10.1149/1.2131407

Cited by 43 publications

(9 citation statements)

References 3 publications

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“…--]Vleasurement of the optical absorption edge is another method for SiNx characterization which is readily applied to films of > 1000A thickness deposited on transparent substrates (10,11). Techniques have also been introduced to measure film composition.…”

Section: Resultsmentioning

confidence: 99%

Properties of Plasma‐Deposited Silicon Nitride

Stein¹,

Wells²,

Hampy³

1979

J. Electrochem. Soc.

125

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The dependence of silicon nitride film composition and properties on the flow rates of ammonia and silane gases during deposition and on subsequent thermal annealing has been investigated for films deposited from a reactive plasma in a commercially available reactor. Ammonia-to-silane flow ratios were varied between 1.3:1 and 4.4: 1, and determinations were made of the refractive index, etch rate, charge transport, absorption edge, Si/N ratio, Si-N bonds, and of chemically bound hydrogen. Increasing the ammonia-tosilane ratio during deposition has the following effects upon the films: decreases excess Si concentration, Si-H bond concentration, refractive index, and charge transport; and increases the concentrations of N-H and Si-N bonds, the energy of the absorption edge, and the etch rate. Isochronal annealing between the deposition temperature (300~ and 900~ causes a loss of chemically bound hydrogen, decreases the film thickness, etch rate, and the energy of the absorption edge, and increases the refractive index and the charge transport. Excess Si in the film composition is a major factor in determining the properties of plasma-deposited silicon nitride films, but the 20 to 25 atomic percent chemically bound hydrogen also plays a role. The importance of hydrogen is particularly apparent in the parallel behavior between an annealing induced shift of the absorption edge and the loss of Sill centers from Si-rich films. The annealing effects are analogous to those for hydrogenated amorphous Si.

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Section: Resultsmentioning

confidence: 99%

Properties of Plasma‐Deposited Silicon Nitride

Stein¹,

Wells²,

Hampy³

1979

J. Electrochem. Soc.

125

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“…This should be due to the difference in the range of absorption wavelength between Si 3 N 4 and SiO 2 . 24,25) Ion-saturation current, on the other hand, decreases more steeply than these two leakage currents as pressure increases. Both current ratios are therefore reduced as pressure increases, as shown in Fig.…”

Section: Suppression Of Local Chargingmentioning

confidence: 99%

Negative Impact of Etched Si Area on Selectivity and Positive Impact of Photoelectric Current on Etched Profile in Gate Etching with Different Wafer Bias Frequencies

Kamibayashi¹,

Kofuji²,

Mori³

et al. 2013

Jpn. J. Appl. Phys.

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The effect of wafer-bias frequency on the dummy-gate fabrication of fin-shaped field-effect transistor (Fin-FET) was investigated. The clear difference in the selectivity of polycrystalline silicon to SiO2 between 400 kHz and 13.56 MHz decreased when the etched Si area increased. On the other hand, a higher frequency increased such selectivity when Si area decreased. These results can be explained by the effect of by-product deposition. As for the etched profile, the amount of side etching was much larger at 13.56 MHz than at 400 kHz. It was reported that this phenomenon is caused by local charging. It was also suggested that the charging should be suppressed by reducing the ratio of ion saturation current to photoelectric current. Therefore, in this study, we investigated the effect of such current ratio on side etching. The result confirmed that a reduction in current ratio induced by increasing gas pressure decreases the amount of side etching.

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“…It is therefore necessary to investigate the optical properties of these films. The literature devoted to this topic is already vast, from the initial investigation of refractive index in visible range to investigations in wider spectral ranges, to studies of specific systems such as double layers, ultrathin films or inhomogeneous optical filters . Films prepared by plasma‐enhanced chemical vapor deposition (PECVD) method and solar‐cell applications were investigated in a number of works .…”

Section: Introductionmentioning

confidence: 99%

Ellipsometric characterization of inhomogeneous non‐stoichiometric silicon nitride films

Nečas

Franta

Ohlı́dal

et al. 2013

Surface & Interface Analysis

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Variable-angle spectroscopic ellipsometry is employed for the optical characterization of non-stoichiometric silicon nitride thin films exhibiting inhomogeneity formed by refractive index and extinction index changes through the film thickness. For all the film samples, the best fit of the experimental data is achieved if, in addition to the inhomogeneity, an overlayer or roughness of the upper boundary is included. However, distinguishing of these two defects is found not to be possible. The influence of working gas ratio, deposition temperature and on/off time on the film properties is studied. The refractive index and extinction coefficient is found to increase with increasing working gas ratio and less significantly with decreasing deposition temperature. It is also found that the inhomogeneity increases with decreasing deposition temperature, and the deposition rate of the films decreases with increasing working gas ratio. The influence of the on/off time on the film properties is practically unimportant.

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Optical Absorption as a Control Test for Plasma Silicon Nitride Deposition

Cited by 43 publications

References 3 publications

Properties of Plasma‐Deposited Silicon Nitride

Properties of Plasma‐Deposited Silicon Nitride

Negative Impact of Etched Si Area on Selectivity and Positive Impact of Photoelectric Current on Etched Profile in Gate Etching with Different Wafer Bias Frequencies

Ellipsometric characterization of inhomogeneous non‐stoichiometric silicon nitride films

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