Opportunity of Spinel Ferrite Materials in Nonvolatile Memory Device Applications Based on Their Resistive Switching Performances

Abstract

The opportunity of spinel ferrites in nonvolatile memory device applications has been demonstrated by the resistive switching performance characteristics of a Pt/NiFe2O4/Pt structure, such as low operating voltage, high device yield, long retention time (up to 105 s), and good endurance (up to 2.2 × 104 cycles). The dominant conduction mechanisms are Ohmic conduction in the low-resistance state and in the lower-voltage region of the high-resistance state and Schottky emission in the higher-voltage region of the high-resistance state. On the basis of measurements of the temperature dependence of the resistances and magnetic properties in different resistance states, we explain the physical mechanism of resistive switching of Pt/NiFe2O4/Pt devices using the model of formation and rupture of conducting filaments by considering the thermal effect of oxygen vacancies and changes in the valences of cations due to the redox effect.

Influence of Bi3+-doping on the magnetic and Mössbauer properties of spinel cobalt ferrite

“…[1][2][3][4][5] The materials research dealing with the structural, chemical and physical properties belonging to the spinel-type structure with general chemical formula M 2+ OM 2 3+ O 3 , wherein M 2+ = Co, Ni, Zn, Cu, or Fe and M 3+ = Al, Cr, Mn, Fe, or V, is at the front line. The spinels occur as natural minerals.…”

Gram scale synthesis of single crystalline nano-octahedron of NiFe2O4: Magnetic and optical properties

“…The optical band gaps of value 1.69 eV for indirect transition and 2.36 eV for direct transition are determined experimentally [2]. Owing to unique properties, Ni ferrite is used in many application like nonvolatile memory device [3], electrocatalytic [4], low dielectric loss power application [5], nano-bio fusion application [6], and hyperthermia applications [7]. At nanoscale dimensions, the properties of Ni ferrite have different behavior as compared to bulk material.…”

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films

“…Recently, spinel ferrites have gained interest as a potential material for RRAM applications [14][15][16][17]. Spinel ferrites have the general formula of AFe 2 O 4 , where A represents one or more divalent metal ions.…”

“…Ag/ ZnFe 2 O 4 /Pt structure has been reported to show RS due to the formation of CFs consisting of metallic Ag and oxygen vacancies [14]. Effort has also been paid to investigate the relation between the resistance state and the magnetic properties using Pt/NiFe 2 O 4 /Pt structures, and the results showed that the difference in the hysteresis loops at HRS and LRS was actually quite small [15]. Ag/ NiFe 2 O 4 /Pt and Ag/CoFe 2 O 4 /Pt structures were reported to have RS if the films were annealed in vacuum, while no RS was found in films annealed in oxygen, indicating that oxygen vacancies played an important role [16].…”