Operational improvement of AlGaN/GaN HEMT on SiC substrate with the amended depletion region

Ghaffari, Majid; Orouji, Ali A.

doi:10.1016/j.physe.2015.07.016

Cited by 3 publications

(2 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The cutoff frequency and the maximum oscillation frequency of the RPC‐HEMT are calculated according to Equations (5) and (6), respectively . As shown in Figure , the

\frac{g_{normalm}}{C_{GD} + C_{GS}}

rises by decreasing the gate‐source capacitance at V DS = 27 V and V GS = −1 V …”

Section: Resultsmentioning

confidence: 99%

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

Jaghargh

Orouji

2020

Int J Numerical Modelling

Self Cite

View full text Add to dashboard Cite

In this paper, an AlGaN/GaN HEMT with a reversed pyramidal channel layer (RPC‐HEMT) is proposed. The main purpose of the paper is an increase in the breakdown voltage of a conventional HEMT (C‐HEMT) to be suitable in high‐power applications. In the RPC‐HEMT, a reverse pyramidal channel layer in the high electric field traps the energetic carriers that cause the transistors to break. The steps decrease the carrier concentration across the two‐dimensional electron gas (2DEG) channel layer, especially under the gate contact. Therefore, the critical electrical field reduces by the uniform division of carrier mass and improves the breakdown voltage of the RPC‐HEMT by 32%. Besides, the maximum output power density of the new transistor improves compared with the conventional one. In addition, the radio frequency (RF) characteristics such as the cutoff frequency and maximum oscillation frequency of the RPC‐HEMT improve by the decline in the gate‐source capacitance. This article provides kink effects with the output reflection coefficient (S22) and the short‐circuit current gain (h21) to show how this anomalous phenomenon affects high‐frequency performance of devices. Finally, the proposed method makes the RPC‐HEMT appropriate for high‐power and high‐frequency applications.

show abstract

“…The cutoff frequency and the maximum oscillation frequency of the RPC‐HEMT are calculated according to Equations (5) and (6), respectively . As shown in Figure , the

\frac{g_{normalm}}{C_{GD} + C_{GS}}

rises by decreasing the gate‐source capacitance at V DS = 27 V and V GS = −1 V …”

Section: Resultsmentioning

confidence: 99%

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

Jaghargh

Orouji

2020

Int J Numerical Modelling

Self Cite

View full text Add to dashboard Cite

show abstract

“…9,10 Figure 1 shows the theoretical limits of Si, SiC, GaN, and diamond based on their BV and specific on-resistance (R on,sp ) with the performances of recently developed GaN power devices on different substrates. 9,[11][12][13][14] With higher electron mobility, lower R on,sp is achievable. Compared with Si devices, SiC and GaN devices can theoretically have R on,sp that are about 1000 times smaller for a particular BV.…”

Section: Introductionmentioning

confidence: 99%

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Kim

Zhang

et al. 2020

Journal of Elec Materi

View full text Add to dashboard Cite

Gallium nitride (GaN) power transistors have attracted significant interest in the power electronics industry over the past decade as the next-generation power semiconductor devices. GaN power transistors are suitable for high power and high frequency applications due to their higher electron mobility, temperature tolerance, electrical conductivity, critical breakdown electric field, and breakdown voltage compared to the conventional silicon-based transistors and other wide bandgap (WBG) power transistors. In particular, GaN-on-silicon (GaN-on-Si) technology has opened up the possibility of manufacturing high-performance, low-cost WBG power devices in silicon-compatible fabrication facilities. The first GaN power transistor structure to be developed was the normally-ON depletion mode (D-mode) device. It relies on the highly mobile two-dimension electron gas (2DEG) at the GaN/AlGaN epitaxial layers' interface to provide very low on-resistance. The normally-OFF enhancement mode (E-mode) GaN power transistor soon became available by controlling the 2DEG using various gate structures. This paper provides a review of the developments of GaN power transistors followed by a survey on current state-of-the-art GaN power technologies and applications, including comparisons between GaN growth substrates and developments of enhancement mode (E-mode) device structures and their process techniques. Moreover, developments of power module designs are also addressed, including gate driver designs and their requirements, and packaging techniques for power transistors and power modules.

show abstract

Modeling of Noise Power Spectral Density Analysis for GaN/AlGaN HEMT

Vimala¹,

Vidyashree²

2016

JAMP

View full text Add to dashboard Cite

Nano Technology is the branch of technology that deals with dimensions and tolerances in terms of nanometers. In this paper, the electrical characteristics analysis is determined for the Nano-GaN HEMT and Micro-GaN HEMT and also power spectrum density is determined for GaN Nano-HEMT by reducing the gate length Lg in nm range. The GaN Nano HEMT is producing high current comparing to Micro GaN HEMT. Accuracy of the proposed analytical model results is verified with simulation results.

show abstract

Operational improvement of AlGaN/GaN HEMT on SiC substrate with the amended depletion region

Cited by 3 publications

References 23 publications

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Modeling of Noise Power Spectral Density Analysis for GaN/AlGaN HEMT

Contact Info

Product

Resources

About