2015
DOI: 10.1063/1.4923197
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Operational electrochemical stability of thiophene-thiazole copolymers probed by resonant Raman spectroscopy

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Cited by 16 publications
(14 citation statements)
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“…In order to inject holes in to the material and control the charge density, we use chronoamperometry to apply a square wave potential and simultaneously measure the temporal current response. Characterization techniques, such as UV−vis and resonant Raman spectroscopy, can be performed in situ and provide information about changes to the optical and structural properties of the oxidized material …”
Section: Methodsmentioning
confidence: 99%
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“…In order to inject holes in to the material and control the charge density, we use chronoamperometry to apply a square wave potential and simultaneously measure the temporal current response. Characterization techniques, such as UV−vis and resonant Raman spectroscopy, can be performed in situ and provide information about changes to the optical and structural properties of the oxidized material …”
Section: Methodsmentioning
confidence: 99%
“…Polarons can be formed by charge injection, chemical doping, or electrochemical doping, as well as by charge generation via photoexcitation. Regardless of how they are formed, polarons in P3HT are similar in nature and exhibit similar spectroscopic signatures. , Photoexcitation can lead to the formation of other types of charge carriers, such as polaron pairs, whose spectral signatures are difficult to distinguish from those of polarons. , Compared to photogeneration and chemical doping, electrochemical doping of P3HT allows precise control of polaron formation in terms of its density . Here, a P3HT film is deposited on conductive glass and immersed in an inert electrolyte, and the polaron density is controlled via an electrochemical potential to the film in a three-electrode cell configuration, while Raman spectroscopic measurements are performed simultaneously (see Figure S1 for experimental setup) under resonant excitation conditions in order to perform in situ electrochemical resonant Raman spectroscopy (ERRS).…”
Section: Introductionmentioning
confidence: 99%
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“…Such behavior has been mainly ascribed to the uncompensated charged trapped in deep localized states in the semiconductor also caused by spurious electrochemical processes (Sirringhaus, 2005; Beatrup et al, 2014; Porrazzo et al, 2014). For example, the presence of polaronic states can cause an increased susceptibility to the electrochemical degradation (Wade et al, 2015). In fact, the presence of hole polarons under device operation is found to make polaron degradation pathways accessible (Beatrup et al, 2014).…”
Section: Introductionmentioning
confidence: 99%