IECEC 96. Proceedings of the 31st Intersociety Energy Conversion Engineering Conference
DOI: 10.1109/iecec.1996.561160
|View full text |Cite
|
Sign up to set email alerts
|

Operation of power electronic converters at cryogenic temperatures for utility energy conditioning applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
7
0

Publication Types

Select...
4
3

Relationship

1
6

Authors

Journals

citations
Cited by 14 publications
(7 citation statements)
references
References 8 publications
0
7
0
Order By: Relevance
“…5.4. This feature permits the reduction of the on-resistance further by paralleling a sufficient number of devices, which has been confirmed experimentally by Gardiner [46] in a 50-kW converter.…”
Section: Device Conduction Lossesmentioning
confidence: 61%
See 3 more Smart Citations
“…5.4. This feature permits the reduction of the on-resistance further by paralleling a sufficient number of devices, which has been confirmed experimentally by Gardiner [46] in a 50-kW converter.…”
Section: Device Conduction Lossesmentioning
confidence: 61%
“…To date, the circuit models for the power diode, the IGBT, and the GTO have been developed [47][48][49] and confirms in Ref. 43 that the model assumptions stay valid in the temperature domain T ≥ 77 K. However, the device models available for MOSFETs are not particularly accurate at predicting the switching characteristics at 77 K as shown in the simulated and measured waveform for a top switch in a half-bridge inverter [46].…”
Section: Device Simulation Modelmentioning
confidence: 81%
See 2 more Smart Citations
“…He found that 3-4 times higher current pulse could be obtained at 77 K and extremely high conversion efficiencies of better than 99% might be achievable at cryogenic temperature for switch mode circuits when high temperature superconductors were used for the high current inductor [11], [19]. Gardiner et al demonstrated the operation of a 50 KW MOSFET based inverter at 77 K [20]. They found that at 77 K substrate diode conduction can be practically avoided, allowing for very short soft switching transition times.…”
Section: Introductionmentioning
confidence: 97%