Operation of monocrystalline silicon resonator in a measuring circuit

Baizar, R.; Voronin, V. A.; Krasnogenov, E.; Богданова, Н. В.

doi:10.1016/0924-4247(92)80213-m

Cited by 4 publications

(1 citation statement)

References 1 publication

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Із НК виготовляють високочутливі датчики малих концентрацій різних газів і рідин [1][2][3], температур [4,5], тензодатчики для вимірювання механічних характеристик, сенсори різноманітних фізичних величин, надміцні композиційні матеріали, мініатюрні підвіски у приладах, мікрозонди [6][7][8][9][10][11]. Однією з перспектив застосування НК є їх використання у хімічних і біологічних сенсорах [12][13][14].…”

Section: вступunclassified

Structure and magnetic properties of Si0.97Ge0.03 whiskers

Pavlovskyy

Luka

Ostrovskyy

et al. 2018

PCSS

View full text Add to dashboard Cite

By the method of chemical transport reactions in the closed halogen system Si-Au-Pt-B-Br, whiskers Si<sub>1-x</sub>Ge<sub>x</sub> x = 0.01-0.08 of transverse dimensions 0.1-100 μm were grown. Structural and magnetic properties of the obtained crystals are investigated. The method of scanning electron microscopy showeds that on the surface of needle-like crystals, with transverse dimensions of 50-80 microns, a porous shell with a thickness of 50-60 nm is present. From the analysis of the energy spectra of X-rays, it was found that the surface shell contains significant concentration atoms of oxygen and of carbon. In turn, oxygen and carbon peaks were not detected on the inner layers of samples. It has been established that the chemical etching of the surface layer of crystals leads to the improvement of their structural and magnetic properties.

show abstract

Section: вступunclassified

Structure and magnetic properties of Si0.97Ge0.03 whiskers

Pavlovskyy

Luka

Ostrovskyy

et al. 2018

PCSS

View full text Add to dashboard Cite

show abstract

Influence of growth conditions on morphology, composition, and electrical properties of n-Si wires

Klimovskaya

Ostrovskii

Ostrovskaya

1996

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

A relationship between growth conditions of silicon wires and their morphology, composition, and electroconductivity is presented. In these crystals recently a lattice parameter change and a visible light emission have been found being almost the same as those observed in porous silicon. The crystals were grown by a method of gas-phase reaction in a sealed tube. Using electron microscopy, X-ray microprobe analysis, ion mass spectrometry, Auger electron spectrometry, and temperature dependencies of electroconductivity, it is shown that the crystals grown in different parts of the tube have various shapes, compositions, and electroconductivities. The study of the grown crystals allows to draw conclusions on the mechanisms of crystal growth and doping, and to find a method for controlling these processes. Varying the growth conditions, one is able to change (i) shape of crystals (cylindrical or prismatic), (ii) size of crystals in the ranges from 1 pm to a few cm (axial) and from 0.1 to 100 pm (transverse), (iii) specific electroconductivity from a few to 200 9 -l cm-' with various degrees of compensation.

show abstract