Operation of a semiconductor microcavity under electric excitation

Abstract

We present a microscopic theory for the description of the bias-controlled operation of an excitonpolariton-based heterostructure, in particular, the polariton laser. Combining together the Poisson equations for the scalar electric potential and Fermi quasi-energies of electrons and holes in a semiconductor heterostructure, the Boltzmann equation for the incoherent excitonic reservoir and the Gross-Pitaevskii equation for the exciton-polariton mean field, we simulate the dynamics of the system minimising the number of free parameters and build a theoretical threshold characteristics: number of particles vs applied bias. This approach, which also accounts for the nonlinear (exciton-exciton) interaction, particle lifetime, and which can, in principle, account for any relaxation mechanisms for the carriers of charge inside the heterostructure or polariton loss, allows to completely describe modern experiments on polariton transport and model devices.

Polariton condensation in photonic crystals with high molecular orientation

“…Thus, our system is described with a kinetics approach. Another beneficial property of AlN is that it has a small lattice mismatch with other nitride-based semiconductor alloys [24]; moreover, AlN stress-free layers can be easily grown on Si/SiC substrates [25].…”

Paramagnetic resonance in spin-polarized disordered Bose-Einstein condensates

“…Beside fundamental importance, semiconductor microcavities operating in the strong coupling regime can be used in various optoelectronic applications [8]. Certainly, a polariton laser should be mentioned here [9][10][11] as a manifestation of BEC-based alternative light source. Coherently pumped microcavities also give us polariton neurons [12] and polariton integrated circuits [13].…”

“…Substituting the bare Green's functions (11) into Eq. ( 22), averaging over the disorder and using the matrix equations Ĝ−1 = Ĝ−1 0 − Ŵ , Ĝ−1 = Ĝ−1 0 − Ŵ, we can now find the impurity-mediated scattering times.…”

Phonon-Mediated Phase Transitions in Two-Dimensional Driven-Dissipative Systems

“…Here τ X is the exciton lifetime, P is the incoherent pumping power, and γ is the rate of EP formation fed by the excitonic reservoir. In the case of nonresonant electrical pumping of the system, P can be expressed via electron and hole concentrations using the drift-diffusion model [30]: P = W n p, where n and p are electron an hole concentrations, calculated from the electron and hole Fermi quasi-energies, W is a parameter (see also Fig. 1 and [24]).…”