Operating Principle and Device Configuration Driven Mechanisms in Low‐Dimensional Materials for Neuromorphics

Abstract

The alluring electronic, optoelectronic, and photonic properties of low‐dimensional materials have allowed brain‐inspired electronics to evolve in unprecedented ways. With highly efficient neuromorphic devices and architecture being concocted lately, an understanding of the underlying device mechanisms has emerged. The question of what types of materials and physical mechanisms will be used in future neuromorphic hardware is still open for debate. Herein, a critical review of the mechanisms among various configurations in state‐of‐the‐art low‐dimensional neuromorphic devices is presented. The factors are also reviewed that influence the working paradigm of low‐dimensional neuromorphic devices under different stimuli. Finally, a forward‐looking outlook on the challenges and perspectives in analyzing the mechanisms in this emerging research direction to drive next‐generation neuromorphic computing is provided.

Optimizing Thin Films and Device Structures for the Design of PbS Colloidal Quantum Dots Near-Infrared Photodetectors

“…Recently, PTs have garnered significant attention in the field of photodetectors due to their ability to achieve low dark current and high photocurrent gain simultaneously, as well as their ease of integration into optoelectronic circuits for next-generation wearable and human-friendly electronics. , PTs can be considered a PC with an additional gate terminal that combines light detection capabilities with signal amplification functions into one device. The applied gate voltage can electrically modulate the charge carrier population through the field effect, which is capable of switching off dark current by operating the device in the depletion regime while also facilitating spatial separation of photoexcited carriers and significantly enhancing responsivity and photosensitivity. − …”